Journal of Infrared and Millimeter Waves, Volume. 41, Issue 4, 726(2022)
Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials
Figures & Tables(13)
Fig. 1. Hall mobility and electron concentrations in different channel indium contents
Fig. 2. HRXRD（004）ω-2θ scans for InAlAs graded buffer layer with different thickness
Fig. 3. The surface morphology of the InAlAs graded buffer layer with different thickness
Fig. 4. The surface morphology of the InGaAs channel with different InAlAs graded buffer layer thickness
Fig. 5. Hall mobility and electron concentrations in different InAlAs graded buffer layer thickness
Fig. 6. The surface morphology of the InAlAs graded buffer layer with different aluminum contents
Fig. 7. The surface morphology of the InGaAs channel with different aluminum contents
Fig. 8. TEM energy spectrum image of InP-HEMT with InAlAs graded buffer layer
Fig. 9. TEM Cross-sectional image of InP-HEMT with InAlAs graded buffer layer
Fig. 10. Hall mobility and electron concentrations in different InAlAs graded buffer layer aluminum contents
Table 1. InP-HEMT structure
View tableView in ArticleTable 1. InP-HEMT structure
Layer Material Thickness /nm S.I InP Substrate Contact layer In0.65Ga0.35As 25 Contact layer In0.52Al0.48As 15 Etch stop layer InP 4 Barrier layer In0.52Al0.48As 8 Doped layer Si concentration （2-4）×1012 cm-2 Spacer layer In0.52Al0.48As 3 Channel layer In0.66Ga0.34As 10 Graded buffer layer InyAl1-yAs z（0，10，30，50，70，90） Buffer layer In0.52Al0.48As 500-z
Table 2. Properties of InAlAs graded buffer layer with different thickness
View tableView in ArticleTable 2. Properties of InAlAs graded buffer layer with different thickness
Thincness/nm 0 10 30 50 70 90 FWHM/s - 131.2 207 39.7 188.9 168.3 µ/cm2（vs）-1 8 020 8 030 8 260 8 570 8 230 7 710 Ns/1012 cm-2 2.735 3.242 3.255 2.7 2.756 3.199 InAlAs RMS/nm 0.117 0.241 0.376 0.154 0.195 0.337 InAlAs+InGaAs RMS/nm 0.185 0.283 0.275 0.17 0.223 0.23
Table 3. Properties of InAlAs graded buffer layer with different aluminum contents
View tableView in ArticleTable 3. Properties of InAlAs graded buffer layer with different aluminum contents
Graded InAlAs
aluminum contents/（%）
48 48→43 48→38 48→34 Graded InAlAs
indium contents/（%）
52 52→57 52→62 52→66 µ/cm2（vs）-1 8020 8070 8570 7800 Ns/1012cm-2 2.735 3.485 2.7 2.987 InAlAs
RMS/nm
0.117 0.197 0.154 0.287 InAlAs+InGaAs RMS/nm 0.185 0.293 0.17 0.217
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Fang-Kun TIAN, Li-Kun AI, Guo-Yu SUN, An-Huai XU, Hua HUANG, Qian GONG, Ming QI. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 726
Paper Information
Category: Research Articles
Received: Nov. 18, 2021
Accepted: --
Published Online: Dec. 13, 2022
The Author Email: Li-Kun AI (likunai@mail.sim.ac.cn)
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