Fig. 1. Schematic diagram of 795 nm VCSEL structure

Fig. 2. Standing wave refractive index distribution diagrams of VCSEL. （a） Single oxide confinement structure； （b） symmetric double oxide confinement structure； （c） symmetric quadruple oxide confinement structure

Fig. 3. Standing wave refractive index distribution diagrams of VCSEL

Fig. 4. Electrical performance parameters of VCSEL with different structures. （a） P-I curves； （b） stimulated radiative recombination rate distribution in multiple quantum wells

Fig. 5. Electron-hole concentration distribution diagrams of different structured VCSEL with multiple quantum wells

Fig. 6. Electrical performance parameters of VCSEL with different structures. （a） P-I-V curves； （b） radial distribution of current density near the first quantum well on the n-side

Fig. 7. Electrical performance parameters of VCSEL with different structures. （a） Distribution of stimulated radiative recombination rate； （b） PCE-Icurves

Fig. 8. Net electron distribution （a） and net hole distribution （b） in three structures near the N-space first quantum well at 5 mA injection current

Fig. 9. Far field distribution of VCSEL with different structures

Fig. 10. Distribution of the three modes of different structures in radial direction. （a） Single oxide confinement structure； （b） symmetric double oxide confinement structure； （c） symmetric quadruple oxide confinement structure