The 795 nm vertical-cavity surface-emitting laser （VCSEL）， commonly used as a laser source in rubidium atomic clocks and quantum gyroscopes， is generally designed with a single oxide confinement layer structure to ensure single-mode output. However， the output power in this structure is limited， and power consumption remains high. In this paper， PICS3D was used to simulate the position of single oxide confinement layer. The results demonstrate that as the oxide confinement layer is positioned closer to the active region， its ability to confine carriers increases. Consequently， under identical injection current conditions， devices exhibit higher output power. On this basis， symmetric double oxide confinement and quadruple oxide confinement structure VCSEL close to the active region are designed. Compared with traditional single oxide confinement VCSEL， multi oxide confinement VCSEL exhibits higher current density in the active region， the output power and power conversion efficiency are significantly improved. In addition， this paper also analyzes the effect of the number of oxide confinement layers on the optical performance of the device through the far-field and near-field， and finds that with the increase of the number of oxide confinement layers， the higher-order modes of the VCSEL are more concentrated in the exit aperture and the far-field divergence angle increases. This study is of great significance for optimizing the VCSEL performance using multiple oxide confinement and balancing the output power and optical performance.