Chinese Journal of Lasers, Volume. 47, Issue 5, 0500008(2020)
Solid-State Waveguide Lasers Based on Laser Crystals
Figures & Tables(15)
![Preparation and characterization of femtosecond laser writing Nd∶YAG optical waveguide[18]. (a) Schematic of femtosecond laser direct writing optical waveguide; (b) schematic of prepared photonic microstructure; (c) microscope image of cross section; (d) guided mode; (e) polarization dependence of waveguide; (f) confocal fluorescence mapping; (g) simulated waveguide mode](/Images/icon/loading.gif){kind=icon}
Fig. 1. Preparation and characterization of femtosecond laser writing Nd∶YAG optical waveguide[18]. (a) Schematic of femtosecond laser direct writing optical waveguide; (b) schematic of prepared photonic microstructure; (c) microscope image of cross section; (d) guided mode; (e) polarization dependence of waveguide; (f) confocal fluorescence mapping; (g) simulated waveguide mode
Fig. 2. Schematic of fabrication of ridge waveguide and Ag nanoparticles in Nd∶YAG crystal[21]
Fig. 3. Y-branch continuous wave guided lasers based on Nd∶YAG[47]. (a) Microscope image of input face; (b) microscope image of upper surface; (c) microscope image of output face; (d) laser patterns; (e) schematic of waveguide structure; (f) experimental setup of waveguide laser
Fig. 4. Waveguide fabrication schemes[49]. (a) Three waveguide fabrication schemes; (b) S-bend waveguide; (c) circular waveguide
Fig. 5. Experimental results of waveguide laser based on Pr∶LiYF4 crystal[54]. (a) 639 nm; (b) 604 nm
Fig. 6. In-band pumped Ho∶KGd(WO4)2 waveguide lasers[60]. (a) Output power versus absorbed pump power; (b) waveguide output laser spectra; (c) loss of waveguide
Fig. 7. Average output power and pulse energy of the Q-switched lasers based on Yb∶YAG waveguide as a function of pump power [98]. (a) Without airgap aligning; (b) with airgap aligning
Fig. 8. Performances of Q-switched laser based on Yb∶KYW planar waveguide[102].(a) Emission spectra; (b) laser modes; (c) pulse trains in 40 μs time span; (d) pulse trains in 4 μs time span
Fig. 9. Q-switched lasers performance based on Tm∶KLuW surface cladding waveguide[103]. (a) Output power versus absorbed pump power; (b) laser emission spectra
Fig. 10. Performances of Q-switched mode-locked lasers based on Nd∶YVO4 cladding waveguide[135]. (a) Q-switched envelope; (b) mode-locked pulse trains; (c) single mode-locked pulse; (d) radio frequency spectrum
Fig. 11. Q-switched mode-locked waveguide lasers based on LiNbO3 saturable absorber embedded with gold nanoparticles[136]. (a) Schematic of experimental setup; (b) output power versus pump power; (c) measured emission spectrum; (d) Q-switched pulse envelope; (e) mode-locked pulse train
Fig. 12. Characteristics of the continuous-wave mode-locked laser based on Yb∶YAG dual-line waveguide[140].(a) Output power versus pump power; (b) mode-locked pulse train; (c) autocorrelation trace; (d) laser emission spectroscopy
Table 1. Recent experimental results for continuous-wave waveguide lasers
View tableTable 1. Recent experimental results for continuous-wave waveguide lasers
Gain media Method Waveguide configuration Wavelength / nm Lasing threshold / mW Slope efficiency / % Max output power /mW Ref. Nd∶YAG Fs laser writing Cladding 1064 95.6 44 181 [61] Nd∶YAG Fs laser writing Cladding 1064 101 46.1 384 [62] Nd∶YAG Ion irradiation/ fs laser ablation Ridge 1064 39 35 20 [63] Nd∶YAG Ion irradiation/ fs laser ablation Ridge 1064 64.9 42.5 46 [64] Nd∶YAG Ion irradiation/ diamond blade dicing Ridge 1064 79 43 84 [65] Nd∶YVO4 Ion irradiation Planar 1067 9.3 8.5 3 [66] Nd∶YVO4 Fs laser writing Cladding 1064 138 65 335 [67] Nd∶GGG Fs laser writing Dual line 1061 29 25 11 [26] Nd∶GdVO4 Fs laser writing Dual line 1063.6 52 70 256 [45] Nd∶GdVO4 Fs laser writing Cladding 1064.5 92 52.3 430 [68] Nd∶GdVO4 Fs laser writing Cladding 1064 178 68 570 [69] Nd∶LuVO4 Fs laser writing Dual line 1066.4 98 14 30 [70] Nd∶KGW Fs laser writing Dual line 1065 141 52.3 33 [71] Nd∶GGG Fs laser writing Cladding 1063 270 44.4 209 [72] Nd∶GGG Ion irradiation/ fs laser ablation Ridge 1063 71.6 41.8 25 [73] Nd∶LGS Fs laser writing Cladding 1068 54 24 16 [74] Nd∶YAP Fs laser writing Cladding 1072/1079 384.5 30.9 101.3 [46] Yb∶YAG Pulsed laser deposition Planar 1030 3200 48 11500 [44] Yb∶YAG Fs laser writing Dual line 1030 181 51 1760 [75] Yb∶YAG Fs laser writing Dual line 1030 245 75 1200 [76] Yb∶YAG Fs laser writing Cladding 1030 392 62.9 80.2 [77] Yb∶YAG Fs laser writing Cladding 1030 141 79 1000 [49] Yb∶KY(WO4)2 Ion irradiation Stripe 1025 5.5 76 650 [78] Cr∶ZnS Fs laser writing Cladding 2333 450 20 101 [59] Ho∶KGd(WO4)2 Fs laser writing Cladding 2055 180 67.2 212 [60] Ho∶YAG Fs laser writing Cladding 2096 100 16 1775 [58] Ho∶ZBLAN Fs laser writing Cladding 2070 110 51 1100 [57] Ho∶ZBLAN Fs laser writing Cladding 2900 27.2 16.7 25 [56] Tm∶KY(WO4)2 Liquid phase epitaxy Stripe 1842 25 70 300 [79] Tm∶KY(WO4)2 Liquid phase epitaxy Stripe 1840 50 80 1600 [80] Tm∶Y2O3 Pulsed laser deposition Planar 1950 50 9 35 [81] Tm∶YAG Fs laser writing Cladding 1985 312 27 660 [82] Tm∶ZBLAN Fs laser writing Cladding 1880 21 50 47 [25] Ho,Tm∶ZBLAN Fs laser writing Cladding 2052 20 20 100 [55] Ti∶sapphire Fs laser writing Dual line 798.25 84 23.5 143 [30] Pr∶YLiF4 Liquid phase epitaxy Planar 639 324 5 25 [53] Pr∶YLiF4 Liquid phase epitaxy Planar 604 527 6 12 [53] Pr∶YLiF4 Liquid phase epitaxy Stripe 604 250 32 165 [54] Pr∶YLiF4 Liquid phase epitaxy Stripe 639 200 40.4 165 [54] Pr∶SrAl12O19 Fs laser writing Dual line 643.5 190 8 28.1 [51]
Table 2. Summary of experimental results for Q-switched waveguide lasers
View tableTable 2. Summary of experimental results for Q-switched waveguide lasers
Gain media Method Waveguide configuration Saturable absorber Wavelength / nm Pulse width /ns Frequency / MHz Pulse energy /nJ Ref. Nd∶YAG Ion irradiation Planar Graphene 1064 9800 0.0029 370 [106] Nd∶YAG Vacuum sintering Planar Graphene oxide 1064 179 0.93 221 [107] Nd∶YAG Ion irradiation Stripe Graphene 1064 57 4.1 77 [108] Nd∶YAG Ion irradiation Stripe WS2 1064 70 6.10 [109] Nd∶YAG Ion irradiation Stripe black phosphorous 1064 55 5.6 [109] Nd∶YAG Fs laser writing Cladding Graphene 1064 55 10.3 4.6 [110] Nd∶YAG Fs laser writing Cladding Graphene 1064 70 4.3 55 [18] Nd∶YAG Fs laser writing Cladding Graphene 1064 90 3.0 63 [111] Nd∶YAG Fs laser writing Cladding MoS2 1064 203 1.10 112 [112] Nd∶YAG Fs laser writing Cladding Graphene 1064 40 [100] Nd∶YAG Fs laser writing Cladding Graphene/WSe2 1064 43.4 [113] Nd∶YAG Fs laser writing Cladding MoSe2 1064 80 3.334 36 [114] Nd∶YAG Fs laser writing Cladding WSe2 1064 52 2.938 19 [114] Nd∶YAG Fs laser writing Cladding SnSe2 1064 129 2.294 44.5 [97] Nd∶YAG Ion irradiation Stripe Bi2Se3 1064 46 4.7 31.3 [115] Nd∶YAG Fs laser writing Cladding Bi2Se3 1064 45 [116] Nd∶YAG Ion irradiation/ diamond blade dicing Ridge WS2 1064 125 0.36 [96] Nd∶YAG Ion irradiation/ fs laser writing Ridge Graphene 1064 99 2.9 14 [117] Nd∶YVO4 Ion irradiation Stripe WS2 1064 52 [118] Nd∶YVO4 Fs laser writing Dual line Graphene 1064 25 16.3 8.1 [119] Nd∶YVO4 Fs laser writing Cladding WS2 1064 51 2.3 [120] Nd∶YVO4 Fs laser writing Cladding Graphene/WS2 1064 66 7.777 33.1 [99] Nd∶YVO4 Fs laser writing Cladding Ag∶LiNbO3 1064 38 [121] Nd∶YVO4 Fs laser writing Cladding Graphene 1064 30 5.3 [120] Nd∶YVO4 Fs laser writing Cladding Graphene 1064 31.2 14.5 26.8 [122] Nd∶GdVO4 Fs laser writing Cladding Graphene 1064 75 18 19 [69] Yb∶YAG Fs laser writing Dual line SESAM 1030 11 5.4 1000 [98] Yb∶YAG Fs laser writing Dual line Carbon nanotubes 1029 78 1.59 37.7 [123] Yb∶Y2O3 Pulsed laser deposition Planar Graphene 1064 121 1.47 330 [124] Yb,Na∶CaF2 Fs laser writing Cladding Graphene 1013.9/1027.9 103.4 0.2693 130 [125] Tm∶KYW Liquid phase epitaxy Planar Graphene 1831.8 195 1.13 5.8 [126] Tm∶KYW Fs laser writing Cladding Graphene 1917 136 0.37 1200 [127] Tm∶KLuW Fs laser writing Cladding Graphene 1846.1 72 1.45 13.1 [104] Tm∶KYW Fs laser writing Cladding Carbon nanotubes 1912 50 1.48 7 [128] Tm∶KYW Fs laser writing Cladding Carbon nanotubes 1846.8 98 1.42 105.6 [103] Tm∶KYW Liquid phase epitaxy Planar Carbon nanotubes 1837.1 83 1.39 33 [129] Yb∶KYW Liquid phase epitaxy Planar Carbon nanotubes 1026 215 1.103 22 [102] Yb∶KLuW Fs laser writing Cladding Carbon nanotubes 1040 88.5 1.16 613 [95] Tm∶KLuW Fs laser writing Cladding MoS2 1845 66 1.51 12 [130]
Table 3. Summary of experimental results for mode-locked waveguide lasers
View tableTable 3. Summary of experimental results for mode-locked waveguide lasers
Gain media Method Waveguide configuration Saturable absorber Operation regime Wavelength / nm Pulse width /ps Frequency / GHz Ref. Nd∶YAG Fs laser writing Cladding Cu∶LN QML 1064 55 8.6 [143] Nd∶YAG Fs laser writing Cladding Ag∶YAG QML 1064 29.5 10.53 [21] Nd∶YAG Fs laser writing Cladding Cu∶LT QML 1064 23.5 8.6 [144] Nd∶YAG Fs laser writing Cladding PtSe2 QML 1064 27 8.8 [145] Nd∶YAG Fs laser writing Cladding Graphene CWML 1064 16.7 11 [138] Nd∶YAG Fs laser writing Cladding Graphene CWML 1061/1064 20 9.8 [146] Nd∶YVO4 Fs laser writing Cladding Modified graphene QML 1064 33 6.5 [135] Nd∶YVO4 Fs laser writing Cladding ReSe2 CWML 1064 29 6.5 [139] Nd∶YVO4 Fs laser writing Cladding MoS2 QML 1064 43 6.5 [134] Nd∶YVO4 Fs laser writing Cladding Bi2Se3 QML 1064 26 6.5 [134] Nd∶YVO4 Fs laser writing Cladding Au∶LN QML 1064 74.1 6.5 [136] Nd∶YVO4 Fs laser writing Cladding Ag∶SiO2 QML 1064 27.4 6.5 [137] Nd∶YVO4 Fs laser writing Cladding WSe2 QML 1064 47 6.5 [147] Tm∶YAG Fs laser writing Cladding Graphene QML 1943.5 ~70 7.8 [132] Ho∶YAG Fs laser writing Cladding Graphene QML 2091 ~100 5.9 [133] Yb∶YAG Fs laser writing Dual line Carbon nanotubes CWML 1030.3 1.89 2.08 [140] Yb∶glass Fs laser writing Dual line Graphene QML 1039 1.06 1.5 [131] Yb∶glass Ion exchange Strip SESAM CWML 1058 0.8 4.9 [148] Yb∶glass Ion exchange Strip SESAM CWML 1041.4 0.811 15.2 [149] Er,Yb∶glass Ion exchange Strip Graphene QML 1535 ~70 6.8 [150] Er,Yb∶glass Fs laser writing Cladding SESAM CWML 1550 0.18 0.156 [141] Tm∶ZBLAN Fs laser writing Cladding Bi2Te3 QML ~1875 ~700 0.436 [151]
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Feng Chen, Ziqi Li. Solid-State Waveguide Lasers Based on Laser Crystals[J]. Chinese Journal of Lasers, 2020, 47(5): 0500008
Paper Information
Category: reviews
Received: Jan. 6, 2020
Accepted: Mar. 9, 2020
Published Online: May. 12, 2020
The Author Email: Chen Feng (drfchen@sdu.edu.cn)
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