Journal of Semiconductors, Volume. 46, Issue 5, 051803(2025)

Magnetron sputtering NiOx for perovskite solar cells

Xiangyi Shen, Xinwu Ke, Yingdong Xia*, Qingxun Guo*, and Yonghua Chen*
Author Affiliations
  • Key Laboratory of Flexible Electronics (KLoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing 211816, China
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    Figures & Tables(10)
    (Color online) (a) Radar chart illustrating the key property difference between NiOx, SAMs, and PEDOT:PSS. (b) Comparison of the optoelectronic properties of NiOx, SAMs, and PEDOT: PSS[10−14].
    (Color online) The schematic diagram of the topics in this review.
    (Color online) (a) Crystal structure of NiOx[23]. (b) The conduction mechanism of NiOx, where Vc represents Ni2+ vacancies[25]. (c) Schematic diagram of the electronic structure of NiOx[26]. (d) Resistivity of Zn-doped NiOx films with different doping ratios[29]. (e) Top-view SEM images of NiOx thin films deposited on FTO[28]. (f) XRD patterns of NiOx thin films[33].
    (Color online) Schematic diagram of NiOx thin film deposition by (a) magnetron sputtering deposition, (b) spin-coating deposition[37], (c) spray pyrolysis droplet deposition[42], (d) electrochemical deposition[44], (e) pulsed laser deposition[46], and (f) ALD techniques[48].
    (Color online) (a) Schematic diagram of the sputtering under low and high sputtering pressure conditions[50]. (b) AFM images of NiOx films and bare glass deposited at different pressures. (c) Transmittance of NiOx thin films deposited by magnetron sputtering under various pressures[52]. (d) Conductivity variation with Ni3+/Ni2+ ratio, and XPS images of NiOx films at 4 mTorr (inset)[54]. (e) XRD patterns of Cu-doped NiOx films with different substrate temperatures[55]. (f) The Ni3+/Ni2+ ratio of NiOx thin films sputtered under various oxygen content[58]. (g) A chart of the energy levels of device functional layers[60]. (h) Structure diagram of aluminum-doped NiOx. (i) J−V curve of perovskite devices based on NiOx and AlyNi1−yOx[64].
    (Color online) (a) The energy levels of common perovskites used in inverted PSCs with magnetron-sputtered NiOx as the HTL[20, 52, 71, 72, 77]. (b) Efficiency evolution of PSCs based on magnetron-sputtered NiOx as HTL[20, 52, 54, 57, 65−74]. (c) Long-term stability of devices based on NiOx and MeO-4PADBC at different temperatures[18]. (d) The J−V curve of the 100 cm² minimodules based on NiOx/Me-4PACz[72]. (e) Schematic diagram of the tandem PSCs with ITO/NiOx as the connecting layer[75]. (f) Flexible perovskite solar cell devices based on NiOx[76].
    (Color online) (a) The energy band diagram of NiOx, interlayer, and perovskites with different bandgaps. (b) The J−V curves of 1.53 eV devices with NiOx, MeO-4PADBC, and NiOx/MeO-4PADBC as HTLs[18]. (c) Schematic diagram of the redox degradation mechanism at the NiOx/perovskite interface[73]. (d) Dark and light J−V curves with excess A-site ion PSCs[80].
    (Color online) (a) Schematic diagram of molecular anchoring group of SAMs[81]. (b) Electrostatic potential of PC molecules and mechanism of co-SAMs modified interface[82]. (c) The corresponding potential histograms of ITO and ITO/NiOx films before and after the adsorption of MeO-2PACz[70]. (d) Energy level diagram for pristine NiOx and NiOx/MeO-2PACz[65]. (e) Schematic diagrams of the NaIO4-modified NiOx film experimental process and the binding of SAMs[83].
    (Color online) (a) Schematic diagram of the structure with NaCl interface introduced between NiOx and perovskite[84]. (b) XRD patterns of the perovskite layer with and without CsBr interfacial layer between NiOx and perovskite[85]. (c) Top-view SEM of NiOx/perovskite and NiOx/CsBr/perovskite. (d) UPS spectra of the work function and valence band regions for NiOx film and NiOx/CsBr film[86]. (e) Chemical structure of the N719 molecule, and the electrostatic potential diagram, and three-dimensional charge density difference diagram of the NiOx(001)/N719/PbI2-rich MAPbI3(001) interface[71]. (f) Schematic electronic structure and carrier distribution of AlOx/perovskite and SiOx/perovskite heterojunctions[89].
    • Table 1. Review summary of the device structure, VOC, JSC, and PCE of inverted PSCs using sputtered NiOx HTLs as discussed in this review.

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      Table 1. Review summary of the device structure, VOC, JSC, and PCE of inverted PSCs using sputtered NiOx HTLs as discussed in this review.

      Device structureSputtering parametersJsc(mA/cm2)Voc(V)PCE (%)Publication dateRef.
      FTO/NiOx/Cs0.17FA0.83Pb(I0.8Br0.2)3/C60/BCP/CuAr/14 sccm/1.32 W/cm218.791.0515.712020[52]
      ITO/NiOx/MeO-2PACz/MAPbI3/AZO/Ag3.5 Pa20.11.1116.252022[65]
      FTO/NiOx/MAPbI3/PCBM/BCP/AgAr&O2/1.3 Pa, 100 W20.571.0516.292018[66]
      FTO/Cu:NiOx/CH3NH3PbI3/ZnO/AgAr : O2 = 35 : 5 sccm/1.5 Pa, Ni : Cu = 300 : 15 W,23.051.0316.512020[67]
      ITO/NiOx /MAPbI3/PCBM/BCP/AgAr/20 sccm/0.4 Pa, 1.97 W/cm2,20.651.0717.62018[68]
      ITO/Mg:NiOx/MAPbI3/PCBM/ZnMgO/AlAr&O2/500 Pa, 80 W//18.52017[20]
      ITO/NiOx/MA0.65FA0.35PbI3/PCBM/BCP/Ag///18.72020[57]
      ITO/NiOx/spiro-TTB/MAPbI3/PCBM/BCP/Ag2.7 Pa, 20 W22.31.0819.52023[54]
      FTO/NiOx/NiyN/MAPbI3/PCBM/BCP/AgAr : N2 = 15 : 45 sccm/0.4 Pa//19.82022[69]
      ITO/NiOx/MeO-2PACz/Cs0.05(FA0.83MA0.17)0.95Pb(I0.82Br0.18)3 /C60/BCP/AgAr : O2 = 20 : 2.2 sccm/0.4 Pa, 80 W22.31.1019.92021[70]
      ITO/NiOx/N719/Cs0.05MA0.15FA0.80Pb(I0.85Br0.15)3/C60/BCP/Ag/23.21.1320.32021[71]
      ITO/NiOx/Me-4PACz/Cs0.2FA0.8Pb(I0.94Br0.053)3/LiF/C60/BCP/Cu/24.11.1421.82024[72]
      ITO/NiOx/Cs0.05MA0.16FA0.79Pb(Br0.16I0.84)3/PCBM/BCP/AgAr/100 sccm /0.37 Pa, 200 W24.121.1922.722024[73]
      ITO/NiOx/Me-4PACz/TEACl/Cs0.1FA0.9PbI2.855Br0.145/TEACl/LiF/C60/BCP/Cu/24.41.1623.02023[74]
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    Xiangyi Shen, Xinwu Ke, Yingdong Xia, Qingxun Guo, Yonghua Chen. Magnetron sputtering NiOx for perovskite solar cells[J]. Journal of Semiconductors, 2025, 46(5): 051803

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    Paper Information

    Category: Research Articles

    Received: Oct. 24, 2024

    Accepted: --

    Published Online: Jun. 4, 2025

    The Author Email: Yingdong Xia (YDXia), Qingxun Guo (QXGuo), Yonghua Chen (YHChen)

    DOI:10.1088/1674-4926/24100032

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