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Photonics Research, Volume. 2, Issue 3, A8(2014)

Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]

David S. Sukhdeo1, Donguk Nam1、*, Ju-Hyung Kang2, Mark L. Brongersma2, and and Krishna C. Saraswat1
Author Affiliations
  • 1Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  • 2Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
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    [1] K.-H. Koo, H. Cho, P. Kapur, K. C. Saraswat. Performance comparisons between carbon banotubes, optical, and Cu for future high-performance on-chip interconnect applications. IEEE Trans. Electron Devices, 54, 3206-3215(2007).

    [2] D. A. B. Miller. Rationale and challenges for optical interconnects to electronic chips. Proc. IEEE, 88, 728-749(2000).

    [3] Y. Ishikawa, K. Wada. Germanium for silicon photonics. Thin Solid Films, 518, S83-S87(2010).

    [4] J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling, J. Michel. Ge-on-Si optoelectronics. Thin Solid Films, 520, 3354-3360(2012).

    [5] J. Liu, L. C. Kimerling, J. Michel. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration. Semicond. Sci. Technol., 27, 094006(2012).

    [6] P. Boucaud, M. El Kurdi, A. Ghrib, M. Prost, M. de Kersauson, S. Sauvage, F. Aniel, X. Checoury, G. Beaudoin, L. Largeau, I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski. Recent advances in germanium emission. Photon. Res., 1, 102-109(2013).

    [7] C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B, 39, 1871-1883(1989).

    [8] L. Vivien, J. Osmond, J.-M. Fédéli, D. Marris-Morini, P. Crozat, J.-F. Damlencourt, E. Cassan, Y. Lecunff, S. Laval. 42  GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. Opt. Express, 17, 6252-6257(2009).

    [9] D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller, K. Saraswat. Strained germanium thin film membrane on silicon substrate for optoelectronics. Opt. Express, 19, 25866-25872(2011).

    [10] J. Michel, J. Liu, L. C. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).

    [11] J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, D. A. B. Miller. Optical modulator on silicon employing germanium quantum wells. Opt. Express, 15, 5851-5859(2007).

    [12] J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, J. Michel. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt. Express, 15, 11272-11277(2007).

    [13] Y. Cai, R. Camacho-Aguilera. High n-type doped germanium for electrically pumped Ge laser. Integrated Photonics Research, Silicon and Nanophotonics (IPRSN), 5-7(2012).

    [14] Y. Cai, R. Camacho-Aguilera, J. T. Bessette, L. C. Kimerling, J. Michel. High phosphorous doped germanium: dopant diffusion and modeling. J. Appl. Phys., 112, 034509(2012).

    [15] M. El Kurdi, G. Fishman, S. Sauvage, P. Boucaud. Band structure and optical gain of tensile-strained germanium based on a 30 band k·p formalism. J. Appl. Phys., 107, 013710(2010).

    [16] G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, T. Schroeder, A. Ghrib, M. de Kersauson, M. El Kurdi, P. Boucaud, B. Tillack. Tensile strained Ge layers obtained via a Si-CMOS compatible approach. International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2(2012).

    [17] B. Dutt, D. S. Sukhdeo, D. Nam, B. M. Vulovic, Z. Yuan, K. C. Saraswat. Roadmap to an efficient germanium-on-silicon laser: strain vs. n-type doping. IEEE Photon. J., 4, 2002-2009(2012).

    [18] R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, J. Michel. An electrically pumped germanium laser. Opt. Express, 20, 11316-11320(2012).

    [19] M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, H. Sigg. Analysis of enhanced light emission from highly strained germanium microbridges. Nat. Photonics, 7, 466-472(2013).

    [20] J. R. Jain, D. Ly-Gagnon, K. Balram. Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics. Opt. Mater. Express, 1, 1121-1126(2011).

    [21] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling. Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications. Appl. Phys. Lett., 87, 011110(2005).

    [22] D. Nam, D. S. Sukhdeo, J.-H. Kang, J. Petykiewicz, J. H. Lee, W. S. Jung, J. Vučković, M. L. Brongersma, K. C. Saraswat. Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles. Nano Lett., 13, 3118-3123(2013).

    [23] A. K. Okyay, A. M. Nayfeh, T. Yonehara, A. Marshall, P. C. McIntyre, K. C. Saraswat. Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection. Conference on Lasers and Electro-Optics (CLEO), CTuU5(2006).

    [24] T. Yi, L. Li, C. Kim. Microscale material testing of single crystalline silicon: process effects on surface morphology and tensile strength. Sens. Actuators A, 83, 172-178(2000).

    [25] D. Nam, D. Sukhdeo, S. Gupta. Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser. IEEE J. Sel. Top. Quantum Electron., 20, 1500107(2013).

    [26] M. J. Süess(2013).

    [27] D. S. Sukhdeo, D. Nam, J.-H. Kang, J. Petykiewicz, J. H. Lee, W. S. Jung, J. Vu, M. L. Brongersma, K. C. Saraswat. Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain. 2013 IEEE 10th International Conference on Group IV Photonics (GFP), 4, 73-74(2013).

    [28] C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, C. W. Liu. Comprehensive study of the Raman shifts of strained silicon and germanium. J. Appl. Phys., 105, 083537(2009).

    [29] S. A. Claussen, E. Tasyurek, J. E. Roth, D. A. B. Miller. Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells. Opt. Express, 18, 25596-25607(2010).

    [30] S.-L. Cheng, G. Shambat, J. Lu, H.-Y. Yu, K. Saraswat, T. I. Kamins, J. Vuckovic, Y. Nishi. Cavity-enhanced direct band electroluminescence near 1550  nm from germanium microdisk resonator diode on silicon. Appl. Phys. Lett., 98, 211101(2011).

    [31] M. Schmid, M. Oehme, M. Gollhofer, R. Körner, M. Kaschel, E. Kasper, J. Schulze. Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes.

    [32] M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes, P. Boucaud. Direct and indirect band gap room temperature electroluminescence of Ge diodes. J. Appl. Phys., 108, 023105(2010).

    [33] P. Velha, K. Gallacher, D. Dumas, M. Myronov, D. Leadley, D. Paul. Direct band-gap electroluminescence from strained n-doped germanium diode. Conference on Lasers and Electro-Optics, CW1L.7(2012).

    [34] R. Camacho-Aguilera, J. Bessette, Y. Cai, L. C. Kimerling, J. Michel. Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers. 8th IEEE International Conference on Group IV Photonics, 190-192(2011).

    [35] D. Nam, D. Sukhdeo, S.-L. Cheng, A. Roy, K. C.-Y. Huang, M. Brongersma, Y. Nishi, K. Saraswat. Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser. Appl. Phys. Lett., 100, 131112(2012).

    [36] R. Geiger, J. Frigerio, M. J. Suess, R. A. Minamisawa, D. Chrastina, G. Isella, R. Spolenak, J. Faist, H. Sigg. Excess carrier lifetimes in Ge layers on Si. IEEE International Conference on Group IV Photonics, 103-104(2013).

    [37] D. S. Sukhdeo, H. Lin, D. Nam, Z. Yuan, B. M. Vulovic, S. Gupta, J. S. Harris, B. Dutt, K. C. Saraswat. Approaches for a viable germanium laser: tensile strain, GeSn alloys, and n-type doping. 2013 Optical Interconnects Conference, 112-113(2013).

    [38] D. Sukhdeo, D. Nam, Z. Yuan, B. Dutt, K. Saraswat. Toward an efficient germanium-on-silicon laser: ultimate limits of tensile strain and n-type doping. Conference on Lasers and Electro-Optics (CLEO), JTh2A.109(2013).

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    David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang, Mark L. Brongersma, and Krishna C. Saraswat, "Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]," Photonics Res. 2, A8 (2014)

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    Paper Information

    Category: Special issue on Group IV Photonics

    Received: Feb. 3, 2014

    Accepted: Mar. 5, 2014

    Published Online: Nov. 5, 2014

    The Author Email: Donguk Nam (dwnam@stanford.edu)

    DOI:10.1364/PRJ.2.0000A8

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology