Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]

David S. Sukhdeo; Donguk Nam; Ju-Hyung Kang; Mark L. Brongersma; and Krishna C. Saraswat

doi:10.1364/PRJ.2.0000A8

Photonics Research, Volume. 2, Issue 3, A8(2014)

Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]

David S. Sukhdeo¹, Donguk Nam^1、*, Ju-Hyung Kang², Mark L. Brongersma², and and Krishna C. Saraswat¹

Author Affiliations

¹Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

²Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

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David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang, Mark L. Brongersma, and Krishna C. Saraswat, "Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]," Photonics Res. 2, A8 (2014)

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Paper Information

Category: Special issue on Group IV Photonics

Received: Feb. 3, 2014

Accepted: Mar. 5, 2014

Published Online: Nov. 5, 2014

The Author Email: Donguk Nam (dwnam@stanford.edu)

DOI:10.1364/PRJ.2.0000A8

Topics

laser devices and laser physics

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