[1] [1] ANGELOV I, ZIRATH H, ROSMAN N, et al. A new empirical nonlinear model for HEMT and MESFET devices ［J］. IEEE Trans Microwave Theo & Techniq, 1992, 40(12): 2258-2266.

[2] [2] LU Y, ZHAO B C, ZHENG J X, et al. A high efficiency C-band internally-matched harmonic tuning GaN power amplifier ［J］. Sol Sta Elec, 2016(123): 96-100.

[3] [3] CRUPI G, CADDEMI A, RAFFO A, et al.GaN HEMT noise modeling based on 50‐Ω noise factor ［J］. Microwave & Optical Technol Lett, 2015, 57(4): 937-942.

[4] [4] MARINKOVI Z, CRUPI G, CADDEMI A, et al. Neural approach for temperature-dependent modeling of GaN HEMTs ［J］. Int J Numer Model Elec Network Dev & Field, 2015, 28(4): 359-370.

[5] [5] DAMBRINE G, CAPPY A, HELIODORE F, et al. A new method for determining the FET small-signal equivalent circuit ［J］. IEEE Trans Microwave Theo & Techniq, 2002, 36(7): 1151-1159.

[6] [6] BERROTH M, BOSCH R. Broad-band determination of the FET small-signal equivalent circuit ［J］. IEEE Trans Microwave Theo & Techniq，1990, 38(7):891-895.

[7] [7] KUMAR K, SARKAR S, SINGH S， et al. Extraction of small signal model of MESFET as control device ［C］ ∥ IET-UK Int Conf Inform & Commun Technol Elec Sci. Tamil Nadu, India. 2007: 897-902.

[8] [8] JARNDAL A. A simplified modelling approach for AlGaN/GaN HEMTs using pinched cold S-parameters ［C］ ∥ IEEE ICMSAO. Hammamet, Tunisia. 2013: 1-4.

[9] [9] JARNDAL A.AlGaN/GaN HEMTs on SiC and Si substrates: a review from the small-signal-modeling's perspective ［J］. Int J RF & Microwave Comput Aid Engineer, 2014, 24(3): 389-400.

[10] [10] JARNDAL A. Genetic algorithm based extraction method for distributed small-signal model of GaN HEMTs ［C］ ∥ IEEE Int Conf Semicond Elec. Melaka, Malaysia. 2010: 41-44.