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Microelectronics, Volume. 51, Issue 2, 290(2021)

An Optimized Parameter-Extraction Method for Parasitic Capacitance of GaAs HEMT Device

HUA Ning1, WANG Jia2, SHANG Huifeng1, ZHANG Quanyuan1, and GAO Xiang1
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    HUA Ning, WANG Jia, SHANG Huifeng, ZHANG Quanyuan, GAO Xiang. An Optimized Parameter-Extraction Method for Parasitic Capacitance of GaAs HEMT Device[J]. Microelectronics, 2021, 51(2): 290

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    Received: Jul. 7, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.200308

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology