[1] [1] KHAN M A, BHATTARAI A, KUZNIA J N, et al. High-electron-mobility transistor based on a GaN-AlxGa1-xN heterojunction[J]. Applied Physics Letters, 1993, 63(9): 1214-1215. DOI: 10.1063/1.109775.

[2] [2] SABINO G. AESA applications by new technologies evolution: invited paper[C]//2019 IEEE International Symposium on Phased Array System & Technology (PAST). Waltham, MA, USA: IEEE, 2019: 1-4. DOI: 10.1109/past43306.2019.9020749.

[3] [3] SHIRSAT S S, SAI P Y, RAJ A A B, et al. Optimized design and application of GaN based power amplifier for C-Ku band of AESA RADAR[C]//2022 International Conference on Augmented Intelligence and Sustainable Systems (ICAISS). Trichy, India: IEEE, 2022: 1346-1351. DOI: 10.1109/icaiss55157.2022.10011118.

[4] [4] WANG Jiahao, WU Qingzhi, LIU Yujie, et al. 6~18 GHz high harmonic suppression GaN power amplifier MMIC for integrated electronic warfare systems[J]. IEEE Microwave and Wireless Technology Letters, 2023, 33(8): 1183-1186. DOI: 10.1109/lmwt.2023.3269499.

[5] [5] ZHONG Shichang, CHEN Tangsheng, YIN Aoxing, et al. High power and high efficiency S-band 300 W GaN HEMT for space applications[C]//2021 International Conference on Microwave and Millimeter Wave Technology (ICMMT). Nanjing, China: IEEE, 2021: 1-3. DOI: 10.1109/icmmt52847.2021.9618081.

[6] [6] LU Hao, ZHANG Meng, YANG Ling, et al. A review of GaN RF devices and power amplifiers for 5G communication applications[J]. Fundamental Research, 2023, 5(1): 315-331. DOI: 10.1016/j.fmre.2023.11.005.

[7] [7] HARROUCHE K, KABOUCHE R, OKADA E, et al. High power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz[C]//2020 IEEE/MTT-S International Microwave Symposium (IMS). Los Angeles, CA, USA: IEEE, 2020: 285-288. DOI: 10.1109/IMS30576.2020.9223971.

[8] [8] VELIKOVSKIY L, SIM P, DEMCHENKO O, et al. InAlN/GaN and AlGaN/GaN HEMT technologies comparison for microwave applications[C]//The 14th International Forum on Strategic Technology (IFOST 2019). Tomsk, Russian Federation: [s.n.], 2019: 012071. DOI: 10.1088/1757-899X/1019/1/012071.

[9] [9] SAINI M, LENKA T R. A high efficiency class AB AlGaN/GaN HEMT power amplifier for high frequency applications[C]//The 2nd International Conference on Micro and Nanoelectronics Devices, Circuits and Systems, MNDCS 2022. Virtual, Online: Scopus, 2023: 239-248. DOI: 10.1007/978-981-19-2308-1_25.

[10] [10] ZHAO B, SANABRIA C, HON T. A 2-stage S-band 2 W CW GaN MMIC power amplifier in an overmold QFN package[C]//2022 IEEE Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS). Waco, TX, USA: IEEE, 2022: 1-5. DOI: 10.1109/wmcs55582.2022.9866273.

[11] [11] LIEN Y W, PENG S W, LIN C K, et al. GaN technologies for applications from L to Ka-band[C]//2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS). Tel-Aviv, Israel: IEEE, 2017: 1-5. DOI: 10.1109/COMCAS.2017.8244831.

[12] [12] LESZCZYNSKI M, PRYSTAWKO P, PLESIEWICZ J, et al. Comparison of Si, sapphire, SiC, and GaN substrates for HEMT epitaxy[J]. ECS Transactions, 2013, 50(3): 163. DOI: 10.1149/05003.0163ecst.

[14] [14] CHEN Xiufang, YANG Xianglong, XIE Xuejian, et al. Research progress of large size SiC single crystal materials and devices[J]. Light, Science & Applications, 2023, 12(1): 28. DOI: 10.1038/s41377-022-01037-7.

[20] [20] ISAAK R, DIAZ J, GERLACH M, et al. 2 m 6 inch GaN-on-SiC MMIC process[C]//International Conference on Compound Semiconductor Manufacturing Technology. Denver, Colorado, USA: [s.n.], 2014: 229-232.

[23] [23] CHENG W C, FANG T, LEI S Q, et al. Silicon nitride stress liner impacts on the electrical characteristics of AlGaN/GaN HEMTs[C]//2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Xi'an, China: IEEE, 2019: 1-3. DOI: 10.48550/arXiv.1903.05290.

[24] [24] KAROUTA F, VORA K, TIAN J, et al. Structural, compositional and optical properties of PECVD silicon nitride layers[J]. Journal of Physics D-Applied Physics, 2012, 45(44): 445301. DOI: 10.1088/0022-3727/45/44/445301.

[25] [25] CHANCHAL, KUMAR S, SAWAL R, et al. Effect of helium gas addition to SF6/O2 chemistry for SiC dry etching in AlGaN/GaN/SiC HEMTs[C]//International Workshop on the Physics of Semiconductor and Devices. Singapore: Springer. 2021: 57-63. DOI: 10.1007/978-981-97-1571-8_7.