Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 4, 322(2025)

Development of domestic 66-inch SiC based GaN HEMT

KONG Xin and WANG Changsi
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  • The 29th Research Institute, China Electronics Technology Group Corporation, Chengdu Sichuan 610036, China
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    KONG Xin, WANG Changsi. Development of domestic 66-inch SiC based GaN HEMT[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(4): 322

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    Paper Information

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    Received: Aug. 25, 2024

    Accepted: May. 29, 2025

    Published Online: May. 29, 2025

    The Author Email:

    DOI:10.11805/tkyda2024403

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