Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 1, 44(2025)

200 GHz doubler based on GaN Schottky diodes

YANG Lanxin, LUO Xiang, XIAO Fei, and ZHANG Yong
Author Affiliations
  • School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu Sichuan 611731, China
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    References(8)

    [1] [1] MEHDI I, SILES J V, LEE C, et al. THz diode technology: status, prospects, and applications[J]. Proceedings of the IEEE, 2017, 105(6): 990-1007. doi: 10.1109/JPROC.2017.2650235.

    [2] [2] BURFORD N M, EL-SHENAWEE M O. Review of terahertz photoconductive antenna technology[J]. Optical Engineering, 2017, 56(1): 010901.

    [3] [3] LEPESHOV S, GORODETSKY A, KRASNOK A, et al. Enhancement of terahertz photoconductive antenna operation by optical nanoantennas[J]. Laser & Photonics Reviews, 2017, 11(1): 1600199.

    [5] [5] KIURU T, DAHLBERG K, MALLAT J, et al. Schottky frequency doubler for 140~220 GHz using MMIC foundry process[C]//2012 the 7th European Microwave Integrated Circuit Conference. Amsterdam, Netherlands: IEEE, 2012: 84-87.

    [6] [6] DENG Jianqin, YANG Yintang, ZHU Zhangming, et al. A 140~220 GHz balanced doubler with 8.7%~12.7% efficiency[J]. IEEE Microwave and Wireless Components Letters, 2018, 28(6): 515-517. doi: 10.1109/LMWC.2018.2823006.

    [7] [7] LUO Xiang, ZHU Huali, ZHANG Tiedi, et al. A 200 GHz GaN-based frequency doubler with bidirectional electro-thermal coupling method[J]. IEEE Microwave and Wireless Technology Letters, 2024, 34(7): 931-934. doi: 10.1109/LMWT.2024.3398001.

    [8] [8] SONG Xubo, LIANG Shixiong, LYU Yuanjie, et al. GaN-based frequency doubler with pulsed output power over 1 W at 216 GHz[J]. IEEE Electron Device Letters, 2021, 42(12): 1739-1742. doi: 10.1109/LED.2021.3119391.

    [9] [9] WU Chengkai, ZHANG Yong, LI Yukun, et al. Millimeter-wave waveguide-to-microstrip inline transition using a wedge-waveguide iris[J]. IEEE Transactions on Microwave Theory and Techniques, 2022, 70(2): 1087-1096. doi: 10.1109/TMTT.2021.3123349.

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    YANG Lanxin, LUO Xiang, XIAO Fei, ZHANG Yong. 200 GHz doubler based on GaN Schottky diodes[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(1): 44

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    Paper Information

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    Received: Aug. 22, 2024

    Accepted: Feb. 25, 2025

    Published Online: Feb. 25, 2025

    The Author Email:

    DOI:10.11805/tkyda2024395

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