Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 1, 44(2025)

200 GHz doubler based on GaN Schottky diodes

YANG Lanxin, LUO Xiang, XIAO Fei, and ZHANG Yong
Author Affiliations
  • School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu Sichuan 611731, China
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    YANG Lanxin, LUO Xiang, XIAO Fei, ZHANG Yong. 200 GHz doubler based on GaN Schottky diodes[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(1): 44

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    Paper Information

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    Received: Aug. 22, 2024

    Accepted: Feb. 25, 2025

    Published Online: Feb. 25, 2025

    The Author Email:

    DOI:10.11805/tkyda2024395

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