Semiconductor Optoelectronics, Volume. 46, Issue 2, 226(2025)

Low-Frequency Noise Characterization of GaN-Based Micro-LED Chips

ZHANG Tengfei1, WANG Wei2, and HUA Wenyuan3
Author Affiliations
  • 1College of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, CHN
  • 2Jiangsu Province Integrated Circuit Reliability Technology and Testing System Engineering Research Center, Wuxi University, Wuxi 214105, CHN
  • 3Jiangnan University, School of Integrated Circuits, Wuxi 214122, CHN
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    In this study, the current-voltage characteristics and current-noise power spectral density of GaN-based blue micro-LED chips are examined to investigate the current-transport mechanism and low-frequency noise behavior under different current injections. The results show that under low current injection (1 nA<I<1 μA), the low-frequency noise is primarily a superposition of G-R noise and noise, which occurs at a frequency of less than 10 Hz. The current noise slopes are 1.75, 2.06, 1.99, and 1.76 at intermediate current injections (6.6 μA<I<830 μA) and at a frequency of below 1×103 Hz. The noise-signal behavior is investigated based on the multiscale entropy complexity, which reflects the noise-signal irregularity, and suggests that the current noise under this current-injection range originates from electron and hole generation-complexation instead of from defect-assisted tunneling. Under high current injection (1 mA≤I≤10 mA), as the current increases, the series resistance is not negligible and the current no longer increases exponentially with the increase in voltage. Thus, the noise 1/f primarily originates from the series resistance and corresponds to noise exponent factors of 1.53, 1.42, 1.37, 1.24, and 1.03, which gradually approach that of standard 1/f noise (γ=1).

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    ZHANG Tengfei, WANG Wei, HUA Wenyuan. Low-Frequency Noise Characterization of GaN-Based Micro-LED Chips[J]. Semiconductor Optoelectronics, 2025, 46(2): 226

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    Paper Information

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    Received: Oct. 10, 2024

    Accepted: Sep. 18, 2025

    Published Online: Sep. 18, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.20241010001

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