Fig. 1. Schematic diagrams of dislocation glide and climb motion^[5]. (a) Glide; (b) climb

Fig. 2. Structure of the oxide VCSEL^[2]

Fig. 3. Cross-section TEM image of the VCSEL from oxide tip^[23]

Fig. 4. Cross-section TEM image of oxide VCSEL damaged by ESD^[28]

Fig. 5. Schematic diagram of VCSEL corrosion failure mechanism^[31]

Fig. 6. VCSEL failure due to mesa oxide edges. (a) Dislocation image of a failed VCSEL^[32]; (b) plane-view TEM image of dislocation^[33]

Fig. 7. Two-step degradation mode of the VCSEL^[18]

Fig. 8. Schematic diagram of internal stress field in crystal^[36]

Fig. 9. Schematic diagram of kink formed during dislocation glide process^[37]

Fig. 10. Schematic diagram of the dislocation glide motion ^[18]

Fig. 11. Schematic diagram of the dislocation shape^[39]

Fig. 12. Temperature dependence of α dislocation rate in gallium arsenide^[5]

Fig. 13. Cross-section TEM of failed VCSEL^[41]

Fig. 14. Process for recombination-enhanced dislocation climb leading to the formation of a dislocation dipole^[18]. (a) Initial screw dislocation; (b) dislocation after climbing

Fig. 15. Growth shapes of various expansion modes^[34]