Chinese Journal of Lasers, Volume. 48, Issue 16, 1601001(2021)

P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Zhonghui Yao1,2, Hongmei Chen2,3,4, Tuo Wang2,5, Cheng Jiang1,2, and Ziyang Zhang1,2、*
Author Affiliations
  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
  • 3Qingdao Yichen Leishuo Technology Co., Ltd., Qingdao, Shandong 266000, China
  • 4Nanchang Research Institute, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi 330200, China
  • 5State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Figures & Tables(7)
    Schematic structure of the QD samples (Inset: TEM image of the QD active region)
    Schematic diagram of QD laser structure
    Simulated reflectivity spectra with different central wavelengths
    PL spectra measured at room temperature for the undoped and p-doped QD materials
    Energy band diagrams of the undoped and p-doped QD samples (the dashed lines are the potential profiles after annealing). (a) Undoped; (b) p-doped
    Cavity length dependence of the threshold current density of ground state for undoped and p-doped QD lasers (Inset: lasing spectra of undoped and p-doped QD lasers)
    Measured reflectivity spectra and EL of QD laser. (a) Reflectivity spectra with λ=1480 nm and EL of p-doped QD laser; (b) lasing spectra of 300 μm p-doped QD laser with coated
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    Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001

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    Paper Information

    Category: laser devices and laser physics

    Received: Dec. 15, 2020

    Accepted: Jan. 27, 2021

    Published Online: Aug. 6, 2021

    The Author Email: Ziyang Zhang (zyzhang2014@sinano.ac.cn)

    DOI:10.3788/CJL202148.1601001

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