Chinese Journal of Lasers, Volume. 48, Issue 16, 1601001(2021)
P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers
Fig. 1. Schematic structure of the QD samples (Inset: TEM image of the QD active region)
Fig. 4. PL spectra measured at room temperature for the undoped and p-doped QD materials
Fig. 5. Energy band diagrams of the undoped and p-doped QD samples (the dashed lines are the potential profiles after annealing). (a) Undoped; (b) p-doped
Fig. 6. Cavity length dependence of the threshold current density of ground state for undoped and p-doped QD lasers (Inset: lasing spectra of undoped and p-doped QD lasers)
Fig. 7. Measured reflectivity spectra and EL of QD laser. (a) Reflectivity spectra with λ=1480 nm and EL of p-doped QD laser; (b) lasing spectra of 300 μm p-doped QD laser with coated
Get Citation
Copy Citation Text
Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001
Category: laser devices and laser physics
Received: Dec. 15, 2020
Accepted: Jan. 27, 2021
Published Online: Aug. 6, 2021
The Author Email: Ziyang Zhang (zyzhang2014@sinano.ac.cn)