P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Zhonghui Yao; Hongmei Chen; Tuo Wang; Cheng Jiang; Ziyang Zhang

doi:10.3788/CJL202148.1601001

Chinese Journal of Lasers, Volume. 48, Issue 16, 1601001(2021)

P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers

Zhonghui Yao^1,2, Hongmei Chen^2,3,4, Tuo Wang^2,5, Cheng Jiang^1,2, and Ziyang Zhang^1,2、*

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

³Qingdao Yichen Leishuo Technology Co., Ltd., Qingdao, Shandong 266000, China

⁴Nanchang Research Institute, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang, Jiangxi 330200, China

⁵State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China

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Zhonghui Yao, Hongmei Chen, Tuo Wang, Cheng Jiang, Ziyang Zhang. P-Modulation Doped 1.3-μm InAs/GaAs Quantum Dot Lasers[J]. Chinese Journal of Lasers, 2021, 48(16): 1601001

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Paper Information

Category: laser devices and laser physics

Received: Dec. 15, 2020

Accepted: Jan. 27, 2021

Published Online: Aug. 6, 2021

The Author Email: Ziyang Zhang (zyzhang2014@sinano.ac.cn)

DOI:10.3788/CJL202148.1601001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology