Journal of Semiconductors, Volume. 42, Issue 3, 032701(2021)

Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

Yingjie Zhao1,2, Shan Li1,2, Huixue Ren1,2, Shaojie Li1,2, and Peide Han1,2
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Yingjie Zhao, Shan Li, Huixue Ren, Shaojie Li, Peide Han. Energy band adjustment of 808 nm GaAs laser power converters via gradient doping[J]. Journal of Semiconductors, 2021, 42(3): 032701

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    Paper Information

    Category: Articles

    Received: Jan. 13, 2020

    Accepted: --

    Published Online: Jun. 17, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/3/032701

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