Journal of Semiconductors, Volume. 42, Issue 3, 032701(2021)

Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

Yingjie Zhao1,2, Shan Li1,2, Huixue Ren1,2, Shaojie Li1,2, and Peide Han1,2
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(10)
    The shapes of gradient doping structure. (a) Linear gradient doping. (b) Exponential gradient doping. (c) Logarithmic gradient doping. (d) Smooth gradient doping.
    (Color online) Structures of GaAs LPCs with different position of gradient doping region.
    Distribution of recombination rate in traditional structure of GaAs LPCs.
    (Color online) Simulation results of the base layer of linear gradient doping LPC. (a) Simulation about doping concentration when the gradient doping region thickness (GDT) in base layer is 1.5, 2.5, and 3.5 μm. (b) Simulation about the thickness of gradient doping region.
    (Color online) (a) Distribution of electric field in base layer with different front surface doping concentration. (b) Distribution of recombination rate in base layer with different front surface doping concentration.
    (Color online) Simulation results of the emitter layer of linear gradient doping LPC. (a) Simulation about doping concentration when the entire emitter layer is doped gradually. (b) Simulation about the thickness of gradient doping region in different position.
    Simulation about doping concentration on the (a) back and (b) front surface of the gradient doping region in base layer. Simulation about doping concentration on the (c) front and (d) back surface of the gradient doping region in emitter layer.
    (Color online) Simulation results of the base layer of exponential gradient doping LPC. (a) Simulation about doping concentration when the entire base layer is doped gradually. (b) Simulation about the thickness of gradient doping region
    (Color online) Simulation results of the emitter layer of exponential gradient doping LPC. (a) Simulation about doping concentration when the entire emitter layer is doped gradually. (b) Simulation about the thickness of gradient doping region in different position.
    (Color online) (a) Distribution of electric field in base layer of linear and exponential gradient doping LPCs. (b) Distribution of recombination rate in base layer of linear and exponential gradient doping LPCs.
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    Yingjie Zhao, Shan Li, Huixue Ren, Shaojie Li, Peide Han. Energy band adjustment of 808 nm GaAs laser power converters via gradient doping[J]. Journal of Semiconductors, 2021, 42(3): 032701

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    Paper Information

    Category: Articles

    Received: Jan. 13, 2020

    Accepted: --

    Published Online: Jun. 17, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/3/032701

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