Laser & Optoelectronics Progress, Volume. 56, Issue 3, 031601(2019)

Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation

Ruihuang Liu, Jiaming Shi*, Dapeng Zhao, Jikui Zhang, and Zhiwei Liu
Author Affiliations
  • State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, Anhui 230037, China
  • show less
    Figures & Tables(9)
    Spectral reflectance curves of photonic crystal at different incident angles
    Cross-sectional SEM image of photonic crystal sample
    Schematic of experimental device
    Attenuation curve of radar wave by photonic crystal sample
    Measured infrared reflectance curves of three stealth materials
    Schematic of testing infrared stealth characteristics
    Temperature line diagrams of air and wall
    Middle-infrared radiation temperature curves of three stealth materials measured in real time from four directions. (a) Detector is located in east or west; (b) detector is located in south or north
    Far-infrared radiation temperature curves of three stealth materials measured in real time from four directions. (a) Detector is located in east or west; (b) detector is located in south or north
    Tools

    Get Citation

    Copy Citation Text

    Ruihuang Liu, Jiaming Shi, Dapeng Zhao, Jikui Zhang, Zhiwei Liu. Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation[J]. Laser & Optoelectronics Progress, 2019, 56(3): 031601

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Materials

    Received: Aug. 2, 2018

    Accepted: Aug. 31, 2018

    Published Online: Jul. 31, 2019

    The Author Email: Jiaming Shi (sjmeei@yahoo.com.cn)

    DOI:10.3788/LOP56.031601

    Topics