Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation

Ruihuang Liu; Jiaming Shi; Dapeng Zhao; Jikui Zhang; Zhiwei Liu

doi:10.3788/LOP56.031601

Laser & Optoelectronics Progress, Volume. 56, Issue 3, 031601(2019)

Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation

Ruihuang Liu, Jiaming Shi^*, Dapeng Zhao, Jikui Zhang, and Zhiwei Liu

State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology, Hefei, Anhui 230037, China

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Ruihuang Liu, Jiaming Shi, Dapeng Zhao, Jikui Zhang, Zhiwei Liu. Preparation and Characteristics of Middle and Far Infrared Stealth of Photonic Crystal Film under Intense Irradiation[J]. Laser & Optoelectronics Progress, 2019, 56(3): 031601

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Paper Information

Category: Materials

Received: Aug. 2, 2018

Accepted: Aug. 31, 2018

Published Online: Jul. 31, 2019

The Author Email: Jiaming Shi (sjmeei@yahoo.com.cn)

DOI:10.3788/LOP56.031601

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology