Laser & Optoelectronics Progress, Volume. 62, Issue 1, 0100002(2025)

Research Progress of Cr∶ZnSe/S Crystal Properties and 2-3 μm Mid-Infrared Lasers

Mengyao Fan1,2,3,4、*, Jing Liu2,3,4, Yuqing Fan2,3,4, Ting Yu2,3,4, Bo Dai1, and Xisheng Ye1,2,3,4
Author Affiliations
  • 1School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2Wangzhijiang Innovation Center for Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 3Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    References(81)

    [8] Wang L, Mao Y F, Gao Y et al. The invention provides a method and a laser device for generating a[P]. -micron band single wavelength stable laser output.

    [15] Yin H B. Several new laser crystals that are expected to be practical[J]. Laser & Optoelectronics Progress, 34, 6-9(1997).

    [17] Liu C Y, Jie W Q. Synthesis methods and process research of ZnSe polycrystalline[J]. Materials Review, 21, 18-21, 26(2007).

    [18] Vallin J T, Watkins G D. EPR of Cr2+ in II-VI lattices[J]. Physical Review B, 9, 2051-2072(2002).

    [27] Adam R, Helena J, Maxim E et al. Laser diode pumped Cr∶ZnSe CW laser tunable in mid-IR range of 2.05-2.65 μm[C], 12577(2023).

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    Mengyao Fan, Jing Liu, Yuqing Fan, Ting Yu, Bo Dai, Xisheng Ye. Research Progress of Cr∶ZnSe/S Crystal Properties and 2-3 μm Mid-Infrared Lasers[J]. Laser & Optoelectronics Progress, 2025, 62(1): 0100002

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    Paper Information

    Category: Reviews

    Received: Mar. 11, 2024

    Accepted: Apr. 25, 2024

    Published Online: Jan. 3, 2025

    The Author Email:

    DOI:10.3788/LOP240856

    CSTR:32186.14.LOP240856

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