Laser & Optoelectronics Progress, Volume. 62, Issue 1, 0100002(2025)

Research Progress of Cr∶ZnSe/S Crystal Properties and 2-3 μm Mid-Infrared Lasers

Mengyao Fan1,2,3,4、*, Jing Liu2,3,4, Yuqing Fan2,3,4, Ting Yu2,3,4, Bo Dai1, and Xisheng Ye1,2,3,4
Author Affiliations
  • 1School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2Wangzhijiang Innovation Center for Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 3Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    Figures & Tables(9)
    Diagram of energy level splitting of Cr2+ ions in the Cr∶ZnSe/S crystal
    Absorption and emission spectra of Cr∶ZnSe/S crystals[19]. (a) Absorption spectrum of Cr:ZnS crystal; (b) absorption spectra of Cr∶ZnSe crystal; (c) emission spectrum of Cr∶ZnS crystal; (d) emission spectra of Cr∶ZnSe crystal
    Single-frequency tunable Cr∶ZnSe laser experimental setup[25]
    Design diagram of resonant cavity for high-power Cr∶ZnSe laser[10]
    Schematic of active mode-locked Cr∶ZnSe laser[55]
    • Table 1. Physical and optical properties of Cr∶ZnSe/S

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      Table 1. Physical and optical properties of Cr∶ZnSe/S

      Physical propertyCr∶ZnSCr∶ZnSeSpectral propertyCr∶ZnSCr∶ZnSe
      Transparency range /μm0.38‒140.5‒15Peak emission cross-section σem /(10-18 cm21.41.3
      Thermal conductivity /(W·cm-1·K-10.270.19Reflection peak λem /μm2.352.45
      dn/dT /(10-6 K-14670Peak absorption cross-section σabs /(10-18 cm21.01.1
      Refractive index2.272.45Absorption peak λabs /μm1.691.77
      Second-order nonlinearity deff /(pm /V)830τem at 300 K /μs4.35.5
      Thermal expansion coefficient /(10-6 K-16.47.3Fluorescence bandwidth /nm800900
      Third-order nonlinearity n2 /(10-20 m2 /W)90 (1.3 μm)170 (1.8 μm)Fluorescence quantum efficiency~0.75~1
    • Table 2. Research progress of continuous and tunable Cr∶ZnSe/S lasers

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      Table 2. Research progress of continuous and tunable Cr∶ZnSe/S lasers

      YearGain mediumPumpTuned cellOutput wavelength /nmTuning bandwidth /nmLaser linewidthOutput power /W
      199721Cr∶ZnSeCo∶MgF2Grating2150‒28006501 nm
      199928Cr∶ZnSeTm:YAPPrism2138‒27606224 nm0.25
      200129Cr∶ZnSeTm:YAG25001.4
      200222Cr∶ZnSCo∶MgF2Prism2188‒2465277≥0.1
      200230Cr∶ZnSEDFLPrism2170‒2840670
      200431Cr∶ZnSeTm∶YALO2460<20 MHz0.01
      200632Cr∶ZnSeNd∶YAGPrism1880‒310012200.145
      200833Cr∶ZnSeEDFLGrating2120‒27706502 nm1.5‒2.1
      200923Cr∶ZnSEDFLGrating1940‒27808407.4
      201034Cr∶ZnSeTDFLGrating2275‒2700425<2 nm14
      20109Cr∶ZnSEDFLZnSe prism1962‒31951233<10 GHz>0.6
      20109Cr∶ZnSeEDFLCaF2 prism1973‒33491376<10 GHz0.6
      201224Cr∶ZnSeLDEOTF2200‒2600400<0.5 nm3.7
      201225Cr∶ZnSeLDGrating2120‒2580460100 kHz0.16
      201326Cr∶ZnSeTm∶YLFCaF2 prism2179‒27205410.383
      201535Cr∶ZnSeTDFLGrating2077‒27777003 GHz0.12
      201610Cr∶ZnSe/STDFL2500140
      201736Cr∶ZnSEDFLAOTF1890‒27858950.8 nm2.8
      201937Cr∶ZnSeTDFLQuartz2365‒24921270.22
      202138Cr∶ZnSTm∶YAPBirefringent filter2350‒252017030 nm
      202239Cr∶ZnSeLDBirefringent filter2100‒27006005 nm≥0.15
      202327Cr∶ZnSeLDBirefringent plate2050‒26506005‒10 nm>1
    • Table 3. Research progress of Cr∶ZnSe/S short pulse lasers

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      Table 3. Research progress of Cr∶ZnSe/S short pulse lasers

      YearGain mediumPumpOperation modeRepetition frequencyPulse width /nsPulseenergyPeak power
      200340Cr∶ZnSeTm∶YAlO3AO Q-switched15157 μJ12.5 W
      200541Cr∶ZnSeTm∶YALOQ-switched7 kHz10018.5 W
      201047Cr∶ZnSeTm∶YAPGain-switched11.254.08 W
      201148Cr∶ZnSeCr∶Tm ∶Ho ∶YAG/Nd∶YAGGain-switched3/10 Hz60/73.1/10.1 mJ0.194/1.443 MW
      201242Cr∶ZnSeEr∶glassGain-switched1.1 J
      201349Cr∶ZnSeNd∶YAGGain-switched10 Hz720 mJ
      201450Cr∶ZnSeTm∶YLFGain-switched20 Hz1.750.5 mJ300 kW
      201543Cr∶ZnSeTDFLPassively Q-switched169 kHz1571.66 μJ10.6 W
      201544Cr∶ZnSeTm∶YAGGain-switched10 Hz7.9 mJ
      201651Cr∶ZnSeHo∶YAGGain-switched2 kHz28.514.6 mJ96.5 kW
      201652Cr∶ZnSe/SHo∶YAG MOPAGain-switched200 Hz516 mJ
      201653Cr∶ZnSeTDFLQ-switched176 kHz189205 nJ36 mW
      201745Cr∶ZnSeTm∶YAGMOPA52.2 mJ
      201854Cr∶ZnSeTm∶YAGGain-switched560.8 mJ
      202146Cr∶ZnSeEr∶YAGAmplification1 kHz251.6 mJ
    • Table 4. Research progress of Cr∶ZnSe/S ultrashort pulse lasers

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      Table 4. Research progress of Cr∶ZnSe/S ultrashort pulse lasers

      YearGain mediumPumpMode-locked mechanismRepetition frequency /MHzPulse width /fsOutput wavelength /nmOutput power /W
      200055Cr∶ZnSeNaCl∶OH color-center laserAOM81440024700.082
      200156Cr∶ZnSeCo∶MgF2AOM10040000.4
      200557Cr∶ZnSeTm∶TALOSESAM1001100025000.4
      200658Cr∶ZnSEDFLSESAM150110024500.125
      200669Cr∶ZnSeEDFLSESAM20010024500.075
      200759Cr∶ZnSeEDFLKLM1808024000.08
      200870Cr∶ZnSeEDFLKLM103≥30024000.05
      201166Cr∶ZnSeTDFLCPA10-33002475
      201171Cr∶ZnSEDFLKLM18011024000.2
      201360Cr∶ZnSeTDFLGraphene7722625000.08
      201461Cr∶ZnSeEYDFGraphene11623520.066
      201462Cr∶ZnSEDFLGraphene1084124000.25
      201572Cr∶ZnSEDFLKLM100<2924000.44
      201667Cr∶ZnSeTDFLCPA10-318425001
      201663Cr∶ZnSEDFLKLM8419
      201664Cr∶ZnSe/SEDFLKLM7927/332.7/7.1
      201673Cr∶ZnSEDFLGraphene1122202120‒24080.88
      201765Cr∶ZnSeEr∶YAGKLM11512523470.08
      201974Cr∶ZnSeLDKLM64.7452400≥0.5
      201975Cr∶ZnSEDFLSWCNT76490.186
      202176Cr∶ZnSEDFLSESAM2507923700.8
      202277Cr∶ZnSeTDFLKLM1713424000.15
      202278Cr∶ZnSLDCNTs830.3
      202279Cr∶ZnSTDFLKLM72.61262220‒25200.344
      202380Cr∶ZnSEDFLGraphene-ZnSe10223500.675
      202381Cr∶ZnSEDFLGraphene-ZnSe2337323730.33
      202368Cr∶ZnSNd∶YAGCPA10-6127.62400
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    Mengyao Fan, Jing Liu, Yuqing Fan, Ting Yu, Bo Dai, Xisheng Ye. Research Progress of Cr∶ZnSe/S Crystal Properties and 2-3 μm Mid-Infrared Lasers[J]. Laser & Optoelectronics Progress, 2025, 62(1): 0100002

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    Paper Information

    Category: Reviews

    Received: Mar. 11, 2024

    Accepted: Apr. 25, 2024

    Published Online: Jan. 3, 2025

    The Author Email:

    DOI:10.3788/LOP240856

    CSTR:32186.14.LOP240856

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