Fig. 1. Schematic diagram of sideband-locked high-power 780 nm laser system

Fig. 2. Measured saturation absorption spectroscopy and error signal of ⁸⁵Rb atomic F=3→F'transitions

Fig. 3. Experimental results. (a) Measured error signal amplitude changes with time when seed laser is free-running and frequency doubled 780 nm sideband is locked, respectively; (b) measured optical spectrum for 2.25 W high-power 780 nm laser, inset shows 780 nm laser spectrum measured before PPLN-1

Fig. 4. Experimental results. (a) Measured linewidth of amplified 1560 nm fundamental frequency laser after sideband locking (solid curve is measured value and dash curve is Lorentz fitting value), inset shows measured result when sideband is not locked; (b) recorded center frequency tuning characteristics of amplified 1560 nm fundamental frequency laser during scanning the EOM-1 microwave modulation frequency