[1] [1] Luo Yi,Zhang Xianpeng,Wang Lin et al.. Non-imaging optics and its application in solid state lighting [J]. Chinese J. Lasers,2008,35(7):963-971

[2] [2] Song Yingping,Guo Xia,Ai Weiwei et al.. Damage removal in GaN-LEDs by two-step etching technology [J]. Chinese Journal of Semiconductors,2006,27(9):1635-1639

[3] [3] D. Basak,M. Verd′u,M. T. Montojo et al.. Reactive ion etching of GaN layers using SF6 [J]. Semicond. Sci. Technol.,1997,12(12):1654-1657

[4] [4] L. Zhang,J. Ramer,J. Brown et al.. Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar [J]. Appl. Phys. Lett.,1996,68(3):367-369

[5] [5] T. Akane,K. Sugioka,H. Ogino et al.. KrF excimer laser induced ablation-planarization of GaN surface [J]. Appl. Surf. Sci.,1999,148(1-2):133-136

[6] [6] J. Zhang,K. Sugioka,S. Wada et al.. Study on high-speed deep etching of GaN film by UV laser ablation [J]. J. Cryst. Growth,1998,189-190(1-2):725-729

[7] [7] K. Ozono,M. Obara,A. Usui et al.. High-speed ablation etching of GaN semiconductor using femtosecond laser [J]. Opt. Commun.,2001,189(1-3):103-106

[8] [8] K. Obata,K. Sugioka,K. Midorikawa,et al.. Deep etching of epitaxial gallium nitride film by multiwavelength excitation process using F2 and KrF excimer lasers [J]. Appl. Phys. A,2006,82(3):479-483

[9] [9] Y. T. Dai,G. Xu,W. L. Li. Laser micromachining of wide bandgap materials [J]. Advanced Materials Research,2009,69-70:118-122

[10] [10] Guo Xiaodong,Li Ruxin,Yu Bingkun et al.. Femtosecond laser pulses induced nanostructures on ZnO in different ablation conditions [J]. Acta Optica Sinica,2008,28(5):1017-1020

[11] [11] Li Yuhua,Ma Fajun,Dai Nengli et al..Ultra-short pulsed laser-induced damage in inorganic silicon materials [J]. Chinese J. Lasers,2007,34(7):1009-1013