Development of Semiconductor Lasers

Lianghui Chen; Guowen Yang; Yuxian Liu

doi:10.3788/CJL202047.0500001

Chinese Journal of Lasers, Volume. 47, Issue 5, 0500001(2020)

Development of Semiconductor Lasers

Lianghui Chen^1、*, Guowen Yang^2,3、**, and Yuxian Liu²

Author Affiliations

¹Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an, Shaanxi 710119, China

³Dogain Laser Technology (Suzhou) Co., Ltd., Suzhou, Jiangsu 215123, China

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Figures & Tables(11)

Fig. 1. Basic structure and characteristics of semiconductor laser. (a) Edge emitter laser; (b) vertical cavity surface emitting laser

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Fig. 2. Group photo of author and Alferov

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Fig. 3. Schematic diagram of 905 nm multiple junction lasers

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Fig. 4. High density VCSEL array and single emitter chip structure diagram from Lumentum^[58]

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Fig. 5. Molecular absorption characteristic spectrum in infrared band

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Fig. 6. Enenrgy band diagram for Sb-compound and InAs semiconductor material^[70]

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Fig. 7. Simulation and experimental results. (a) Intraband cascade laser energy band digram; (b) temperature tuned lasing wavelength^[99]

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Table 1. Research progress of GaAs-based 8xx nm high-power semiconductor lasers

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Table 1. Research progress of GaAs-based 8xx nm high-power semiconductor lasers

Material	Lasingwavelength /nm	Device type	Key parameter	Year	Group	Reference
InGaAsPQWs	808	Bar 1 cm,20% fill factor	50 W@CWPCE:64%@25 ℃Max PCE:67%@5 ℃	2010	USA,Lasertel Company	[21]
GaAs/AlGaAsQWs	808	Bar	200 W @QCWPCE:62% @25 ℃	2011	Institute ofSemiconductors,CAS	Internalcommunication
InAlGaAs/AlGaAsQWs	808	Bar50% fill factor	106 W @CWPCE: 66%@25 ℃Max PCE:71%@25 ℃	2017	Xi'an Institute ofOptics and PrecisionMechanics of CAS	[22]
InAlGaAs/AlGaAsQWs	808	Bar	613 W @QCW,8%duty cycle,slope efficiency: 1.34 W/A	2017	Xi'an Institute ofOptics and PrecisionMechanics of CAS	[23]
GaAs/AlGaAsQWs	880	Stacked array	4 kW@1% duty cycleslope efficiency:1.2 W/A, PCE: 55%	2015	Germany,Jenoptik company	[24]
GaAs/AlGaAsQWs	880	Bar 1 cm,cavity length:3 mm	1.8 kW@200 μs@14 Hz,PCE: 61 %	2017	USA,nLight company	[25]

Table 2. Research progress of GaAs-based 9xx nm high-power semiconductor lasers

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Table 2. Research progress of GaAs-based 9xx nm high-power semiconductor lasers

Material	Lasingwavelength /nm	Device type	Power and PCE	Year	Company/research group	Reference
InGaAs/AlGaAsQWs	915	Single emmiter5 mm,150 μm	18 W@25 ℃@CW,PCE:58%	2015	USA,nLight	[29]
AlInGaAs/GaAsQWs	915	Single emmiter4 mm,220 μm	Max 68 W@QCW;Max 33 W@CW;17 W@25 ℃@CW:PCE:65%;Max PCE: 68%	2017	JapanFujikura	[30]
InGaAs/GaAsQWs	915	Single emmiter4 mm,100 μm	21.6 W@25 ℃@CW,PCE≥65%,Max PCE: 74%	2017	Institute ofSemiconductorsof CAS	Internal communication
InGaAs/AlGaAsQWs	915	Single emmiter4.8 m,95 μm	12 W@25 ℃@CW,PCE: 63.5%,Max PCE:66.5%	2018	Research Institute ofTsinghua Universityin Shenzhen andRaybow company	[31]
InGaAs/GaAsQWs	940	Single emmiter2 mm,100 μm	10 W@25 ℃@CW,PCE: 56%,Max PCE: 76%	2014	Shandong University,Shandong Huaguangcompany	[32]
InGaAs/GaAsQWs	940	Bar41%fill factor	100 W@25 ℃,PCE:76%	2007	USA,JDSU company	[33]
InGaAs/GaAsQWs	940	Bar80% fill factor,4 mm	1 kW @25 ℃ QCW,2% duty cycle	2015	Institute ofSemiconductorsof CAS	Internalcommunication
InGaAs/GaAsQWs	940	Bar75% fill factor,4 mm	1 kW@203 K@QCW(1.2 ms,10 Hz),PCE:70%	2016	Germany,FBH	[34]
InGaAs/GaAsQWs	940	Bar75% fill factor2 mm	660 W@600 A@25 ℃QCW(600 μs,160 Hz),PCE: 64.7%,Max PCE: 72.4%	2019	Xi'an Institute ofOptics and PrecisionMechanics of CAS	[35]
InGaAs/GaAsQWs	950	Single emmiter5.7 mm,100 μm	29.5 W@25 ℃@CW,Max PCE: 61%	2015	USA,JDSU company	[36]
InGaAs/GaAsQWs	976	Single emmiter4 mm,100 μm	12 W@25 ℃@CW,PCE: 69.5%,Max PCE: 73%	2017	USA,IPG company	[37]
InGaAs/GaAsQWs	975	Single emmiter4 mm,180 μm	20 W@25 ℃@CW.PCE: 66.7%,Max PCE: 72.5%	2019	Japan Fujikura	[38]
InGaAs/GaAsQWs	975	Single emmiter4 mm,100 μm	12 W@25 ℃@CW,PCE≥65%,Max PCE: 72.4%	2017	Institute ofSemiconductorsof CAS	Internalcommunication
InGaAs/GaAsQWs	976	Bar	200 W @25 ℃@CWPCE>72%	2016	Xi'an Instituteof Optics andPrecisionMechanics of CAS	[39]

Table 3. Research progress of data communications VCSEL lasers

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Table 3. Research progress of data communications VCSEL lasers

Research group	Wavelength /nm	Speed /(Gbit/s)	Year	Reference	Notes
IBM	850	20	2001	[51]
Finisar	850	30	2008	[52]
Chalmers U.	850	40	2010	[53]
Chalmers U.	850	57	2013	[54]
IBM	850	64	2013	[55]	With equalization
IBM- Chalmers U.	850	71	2015	[56]	With equalization

Table 4. Research progress on GaAs-based high-power VCSELs array

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Table 4. Research progress on GaAs-based high-power VCSELs array

Company/research group	Wavelength /nm	Test condition	Peak poweroutput /W	Year	Reference
Princeton Optronics	975	CW	230	2008	[63]
Princeton Optronics	975	Pulse (2 kA,100 ns)	2200	2008	[63]
Hamamatsu Photonics K.K.	980	QCW (390 A,50 μs, 20 Hz)	216	2014	[64]
Princeton Optronics	808	QCW (100 μs,100 Hz )	100	2015	[65]
Princeton Optronics	976	QCW (100 μs,100 Hz )	450	2015	[65]
Changchun Institute of Optic	980	Pulse (105 A,30 ns,2 kHz)	226	2016	[66]
Princeton Optronics	808	QCW (100 μs,100 Hz )	800	2017	[67]
TriLumina Corp.	940	CW (15 ns,10 kHz)	400	2018	[68]