Chinese Journal of Lasers, Volume. 47, Issue 5, 0500001(2020)

Development of Semiconductor Lasers

Lianghui Chen1、*, Guowen Yang2,3、**, and Yuxian Liu2
Author Affiliations
  • 1Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an, Shaanxi 710119, China
  • 3Dogain Laser Technology (Suzhou) Co., Ltd., Suzhou, Jiangsu 215123, China
  • show less

    Semiconductor laser has been half a century since its birth, tremendous progress has been made in theory, practice, and applications, and the market occupies more than half of the entire laser field. It is widely used in communication networks, industrial processing, medical and beauty, laser sensing, aviation and defense, security protection, and even consumer electronics. On the basis of reviewing the development history of early domestic and international semiconductor lasers, this article mainly focuses on GaAs-based 8xx nm and 9xx nm semiconductor lasers in the field of high-power pump sources, 905 nm tunnel junction lasers and 940 nm vertical cavity surface emitting lasers in the field of three-dimensional sensing, and GaSb-based infrared lasers and InP-based quantum cascade lasers in the field of spectral analysis and infrared sensing, for a brief review. The content includes the main application scenarios, the main goals pursued, the latest developments in the past 10 years at home and abroad, and the possible development trends and directions in the future.

    Tools

    Get Citation

    Copy Citation Text

    Lianghui Chen, Guowen Yang, Yuxian Liu. Development of Semiconductor Lasers[J]. Chinese Journal of Lasers, 2020, 47(5): 0500001

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: reviews

    Received: Apr. 14, 2020

    Accepted: Apr. 28, 2020

    Published Online: May. 12, 2020

    The Author Email: Chen Lianghui (chenlh@semi.ac.cn), Yang Guowen (yangguowen@opt.ac.cn)

    DOI:10.3788/CJL202047.0500001

    Topics