Journal of Infrared and Millimeter Waves, Volume. 42, Issue 1, 37(2023)

Design of 230~250 GHz low noise amplifier based on 70 nm InP HEMT process

Xing LIU1, Fan-Zhong MENG1, Yan CHEN1, Ao ZHANG2、*, and Jian-Jun GAO3
Author Affiliations
  • 1The 13th Research Institute,CETC,Shijiazhuang 050051,China
  • 2School of Transportation and Civil Engineering,Nantong University,Nantong 226019,China
  • 3School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China
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    References(14)

    [1] Hurm V., Weber R., Massler H. et al. A 243 GHz LNA module based on mHEMT MMICs with integrated waveguide transitions[J]. IEEE Microwave and Wireless Components Letters, 23, 486-488(2013).

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    [4] Zamora A., Leong K. H., Reck T. et al. A 170-280 GHz InP HEMT low noise amplifier[C], 1-2(2014).

    [5] Kawano Y., Matsμmura H., Shiba S. et al. 230-240 GHz, 30 dB gain amplifier in InP-HEMT for multi-10 Gb/s data communication systems[C], 1-4(2013).

    [6] MAO Yan-fei, Shi-ju E, SCHMALZ Klaus et al. Research on 220 GHz Low Noise Amplifiers[J]. INFRARED, 40, 24-30(2019).

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    [8] Liu Yongqiang, Zhang Lijiang, Wei Hongtao et al. 3 mm Band Low Noise Amplifier[J]. Semiconductor Technology, 39, 410-413(2014).

    [9] Varonen M., Reeves R., Kangaslahti P. et al. An MMIC Low-Noise amplifier design technique[J]. IEEE Transactions on Microwave Theory and Techniques, 64, 826-835(2016).

    [10] Wang Yutong, Wu Hongjiang, Liu Yongqiang. A 130-140 GHz MMIC Low Noise Amplifier[J]. Semiconductor Technology, 42, 426-430(2017).

    [11] Eriksson K., Gunnarsson S. E., Vassilev V. et al. Design and characterization of H-band (220–325 GHz) amplifiers in a 250-nm InP DHBT technology[J]. IEEE Transactions on Terahertz Science and Technology, 4, 56-64(2014).

    [12] Wang Z., Chiang P.-Y., Nazari P. et al. A CMOS 210-Ghz fundamental transceiver with OOK modulation[J]. IEEE Journal of Solid-State Circuits, 49, 564-580(2014).

    [13] K. K. Tokgozet al. A 273–301-GHz amplifier with 21-dB peak gain in 65-nm standard bulk CMOS[J]. IEEE Microwave and Wireless Components Letters, 29, 342-344(2019).

    [14] Gadallah A., Eissa M. H., Mausolf T. et al. Malignaggi. A 300-GHz Low-Noise amplifier in 130-nm SiGe SG13G3 technology[J]. IEEE Microwave and Wireless Components Letters, 32, 331-334(2022).

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    Xing LIU, Fan-Zhong MENG, Yan CHEN, Ao ZHANG, Jian-Jun GAO. Design of 230~250 GHz low noise amplifier based on 70 nm InP HEMT process[J]. Journal of Infrared and Millimeter Waves, 2023, 42(1): 37

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    Paper Information

    Category: Research Articles

    Received: Jun. 10, 2022

    Accepted: --

    Published Online: Feb. 23, 2023

    The Author Email: Ao ZHANG (aozhang@ntu.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2023.01.006

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