Fig. 1. InP HEMT device structure

Fig. 2. Plot of f_T，f_max and F_min versus gate capacitance

Fig. 3. Transfer characteristics of the 2×15 μm InP HEMT device

Fig. 4. Optimum noise figure and characteristic frequency of 2×15 μm InP HEMT device

Fig. 5. Topology of the LNA

Fig. 6. Single stage common source amplifier

Fig. 7. The bias circuit(a) and simulation result (b)

Fig. 8. 3D EM simulation model

Fig. 9. Photograph of the LNA TMIC

Fig. 10. Simulated and measurement results for gain of the 220~250 GHz LNA TMIC

Fig. 11. LNA with package

Fig. 12. Y-factor noise figure measurement diagram

Fig. 13. Simulated and measurement noise figure results of the LNA TMIC