Chinese Journal of Liquid Crystals and Displays, Volume. 38, Issue 8, 1054(2023)
Loading effect and solutions in gate etching process for TFT
Fig. 1. Schematic diagram for panel and wiring layout. (a) Panel layout; (b) Difference in wiring density between AA and fanout areas.
Fig. 2. Micro-processes for wet etch. (a)Etchant spraying; (b) Metal oxidation; (c) Oxide dissove.
Fig. 4. Etching chamber arrangement and electrode pattern evolution process
Fig. 6. Results of neural network analysis for etching experiments. (a) Neural network structure; (b) Influence of different etching chamber time ratios on the etching difference between active area and fanout zone.
Table 1. Etching results for different time ratios
View tableView in ArticleTable 1. Etching results for different time ratios
Num Etch1/% Etch2/% Etch3/% Active area bias Fanout bias Bias gap Cluster type S1 33.33 33.33 33.33 0.749 1.324 0.575 1 S2 56.67 33.33 10.00 0.865 1.258 0.393 2 S3 10.00 56.67 33.33 0.79 1.334 0.544 3 S4 10.00 33.33 56.67 0.795 1.332 0.537 3 S5 21.67 21.67 56.67 0.749 1.364 0.615 1 S6 56.67 21.67 21.67 0.803 1.268 0.465 2 S7 21.67 56.67 21.67 0.842 1.269 0.427 2 S8 33.33 56.67 10.00 0.872 1.259 0.387 2 S9 10.00 80.00 10.00 0.906 1.223 0.317 2
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Dan LIU, Zhong-hao HUANG, Sheng HUANG, Liang FANG, Qi-chao CHEN, Fei GUAN, Liang-dong WU, Xu WU, Yan-qiu LI, Hong-tao LIN. Loading effect and solutions in gate etching process for TFT[J]. Chinese Journal of Liquid Crystals and Displays, 2023, 38(8): 1054
Category: Research Articles
Received: Mar. 22, 2023
Accepted: --
Published Online: Oct. 9, 2023
The Author Email: Liang FANG (lfang@cqu.edu.cn)
