Fig. 1. Synthesis route of silicon carbide nanowires

Fig. 2. Characterization of material samples (a~d) SEM images, (e~g) TEM images, (h) XRD spectra, (i) Raman spectra

Fig. 3. SEM images of SiC nanowires with different ultrasonic durations at 75% power(a) 0 min, (b) 1 min, (c) 3 min, (d) 5 min

Fig. 4. SEM images of SiC nanowires with different ultrasonic durations at 25% power(a~b) 0 min, (c~d) 15 min, (e~f) 30 min, (g~h) 45 min, (i~j) 60 min

Fig. 5. Relationship between the average length-diameter ratio of SiC nanowires and ultrasonic duration

Fig. 6. SiC nanowires deformed during growth

Fig. 7. SEM of SiC nanowires with different cross-sections(a) NWs with changed cross-sectional shape, (b) Uniformly hexagonal cross-section, (c~d) Variable hexagonal cross-section, (e~f) Triangular cross-section

Fig. 8. Relationship between diameter and length of SiC nanowires with ultrasonic duration of 60 min