Researching | Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process

Journal of Infrared and Millimeter Waves, Volume. 41, Issue 4, 668(2022)

Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process

Guo-Hao JU^1,2,3, Zheng-Xi CHENG^1、*, and Yong-Ping CHEN^1,4、**

Author Affiliations

¹Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

²University of Chinese Academy of Sciences，Beijing 100049，China

³School of Information Science and Technology，ShanghaiTech University，Shanghai 201210，China

⁴Nantong Academy of Intelligent Sensing，Nantong 226000，China

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References(15)

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[10] Iiyama K, Takamatsu H, Maruyama T. Silicon lateral avalanche photodiodes fabricated by standard0.18 µm CMOS process[C], 1-2(2009).

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Guo-Hao JU, Zheng-Xi CHENG, Yong-Ping CHEN. Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 668

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Paper Information

Category: Research Articles

Received: Oct. 21, 2021

Accepted: --

Published Online: Dec. 13, 2022

The Author Email: Zheng-Xi CHENG (chen_yp@mail.sitp.ac.cn), Yong-Ping CHEN (czx@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2022.04.002

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology