Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process

Guo-Hao JU; Zheng-Xi CHENG; Yong-Ping CHEN

doi:10.11972/j.issn.1001-9014.2022.04.002

Journal of Infrared and Millimeter Waves, Volume. 41, Issue 4, 668(2022)

Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process

Guo-Hao JU^1,2,3, Zheng-Xi CHENG^1、*, and Yong-Ping CHEN^1,4、**

Author Affiliations

¹Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

²University of Chinese Academy of Sciences，Beijing 100049，China

³School of Information Science and Technology，ShanghaiTech University，Shanghai 201210，China

⁴Nantong Academy of Intelligent Sensing，Nantong 226000，China

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Figures & Tables(4)

Fig. 1. Schematic views of APD (a) cross section, (b) simplified electric field distribution, (c) the microscopic picture of the complete APD device, (d) the microscopic picture of the photosensitive region (Unit: μm)

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Fig. 2. Currents vs. reverse bias voltage

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Fig. 3. Multiplication gain vs. reverse bias voltage

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Fig. 4. Normalized responsivity vs. wavelength（450 ~ 1050 nm）

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Guo-Hao JU, Zheng-Xi CHENG, Yong-Ping CHEN. Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process[J]. Journal of Infrared and Millimeter Waves, 2022, 41(4): 668

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Paper Information

Category: Research Articles

Received: Oct. 21, 2021

Accepted: --

Published Online: Dec. 13, 2022

The Author Email: Zheng-Xi CHENG (chen_yp@mail.sitp.ac.cn), Yong-Ping CHEN (czx@mail.sitp.ac.cn)

DOI:10.11972/j.issn.1001-9014.2022.04.002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology