When the external excitation is applied to the thin film bulk acoustic resonator(FBAR), the longitudinal and transverse shear vibration will be excited, resulting in energy loss. In order to reduce parasitic resonance, reduce the working loss of FBAR device and improve the quality factor of the device, it is necessary to suppress the transverse shear vibration. In this paper, the influence of the top electrode edge load parameters on the transverse parasitics of FBAR device is investigated by using the finite element simulation and implemented by the COMSOL simulation software, and the resonator with complete structure is prepared. It is tested that the load structure can effectively improve the quality factor of the device by about 10%.