Modeling and Analysis of Charge Overflow in Active Pixels Based on LOFIC Technology

Qiang Zhang; Zhiyuan Gao; Biao Ma; Jing Gao; Jiangtao Xu

doi:10.3788/LOP250798

Laser & Optoelectronics Progress, Volume. 62, Issue 16, 1625001(2025)

Modeling and Analysis of Charge Overflow in Active Pixels Based on LOFIC Technology

Qiang Zhang^1,2, Zhiyuan Gao^1,2、*, Biao Ma^1,2, Jing Gao^1,2, and Jiangtao Xu^1,2

Author Affiliations

¹School of Microelectronics, Tianjin University, Tianjin 300072, China

²Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin 300072, China

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References(17)

[1] Nie X, Wang Z J, Wang B C et al. Experiment and analysis of damage of CMOS image sensor induced by proton irradiation with different bias conditions[J]. Acta Optica Sinica, 43, 1928001(2023).

[2] Zhang S A. Accelerated hyperspectral imaging via temporal compressive sensing[J]. Advanced Photonics, 5, 9-10(2023).

[3] Xiong S J, Yang X G. Optical color routing enabled by deep learning[J]. Nanoscale, 16, 9284-9294(2024).

[4] Jin W Q, Li L, Wang X. Research and application of thermal imaging mode and image processing technology[J]. Acta Optica Sinica, 43, 1510001(2023).

[5] Takayanagi I, Miyauchi K, Okura S et al. A 120-ke- full-well capacity 160-µV/e- conversion gain 2.8-µm backside-illuminated pixel with a lateral overflow integration capacitor[J]. Sensors, 19, 5572(2019).

[6] Chen Q, Wen L, Yang X G et al. Structural color technology for high pixel density image sensors[J]. Acta Optica Sinica, 41, 0823010(2021).

[7] Gao J, Gong Y C, Gao Z Y et al. Analytical modeling of exposure process in pinned photodiode CMOS image sensors[J]. IEEE Journal of the Electron Devices Society, 8, 1063-1071(2020).

[8] Sarkar M, Buttgen B, Theuwissen A J P. Feedforward effect in standard CMOS pinned photodiodes[J]. IEEE Transactions on Electron Devices, 60, 1154-1161(2013).

[9] Han L Q, Yao S Y, Theuwissen A J P. A charge transfer model for CMOS image sensors[J]. IEEE Transactions on Electron Devices, 63, 32-41(2016).

[10] Wang X Y, Gao Y Q, Gao Z Y et al. Charge transfer potential barrier model of a pinned photodiode in CMOS image sensors[J]. IEEE Sensors Journal, 22, 4036-4042(2022).

[11] Xu Y, Ge X L, Theuwissen A J P. A potential-based characterization of the transfer gate in CMOS image sensors[J]. IEEE Transactions on Electron Devices, 63, 42-48(2016).

[12] Khan U, Sarkar M. Analysis of charge transfer potential barrier in pinned photodiode of CMOS image sensors[J]. IEEE Transactions on Electron Devices, 68, 2770-2777(2021).

[13] Khan U, Sarkar M. Dynamic capacitance variations due to barrier modulation in pinned photodiode of CMOS image sensor[J]. IEEE Transactions on Electron Devices, 66, 5202-5208(2019).

[14] Lee J, van Sieleghem E, Kim H et al. Analytical model of the vertical pinned photodiode[J]. IEEE Transactions on Electron Devices, 69, 5603-5606(2022).

[15] Alaibakhsh H, Karami M A. Analytical modeling of pinning process in pinned photodiodes[J]. IEEE Transactions on Electron Devices, 65, 4362-4368(2018).

[16] Cao C, Shen B L, Zhang B et al. An improved model for the full well capacity in pinned photodiode CMOS image sensors[J]. IEEE Journal of the Electron Devices Society, 3, 306-310(2015).

[17] Wang X Y, Cui Y A, Xu J T et al. Broad spectral response of PD in FSI-CIS with near-IR sensitivity enhancement based on the model of full impurity compensation[J]. IEEE Sensors Journal, 24, 41038-41044(2024).

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Qiang Zhang, Zhiyuan Gao, Biao Ma, Jing Gao, Jiangtao Xu. Modeling and Analysis of Charge Overflow in Active Pixels Based on LOFIC Technology[J]. Laser & Optoelectronics Progress, 2025, 62(16): 1625001

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Paper Information

Category: OPTOELECTRONICS

Received: Mar. 11, 2025

Accepted: Mar. 25, 2025

Published Online: Jul. 30, 2025

The Author Email: Zhiyuan Gao (gaozhiyuan@tju.edu.cn)

DOI:10.3788/LOP250798

CSTR:32186.14.LOP250798

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology