Laser & Optoelectronics Progress, Volume. 60, Issue 15, 1514007(2023)

Deep-Ultraviolet Laser-Diode Radiation Recombination Properties Based on Double-Concave Waveguide Layers

Yuan Xu1, Shiqin Wei1, Pengfei Zhang1, Yao Wang1, Fang Wang1,2、*, and Yuhuai Liu1,2,3,4、**
Author Affiliations
  • 1National Center for International Joint Research of Electronic Materials and Systems, School of Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 2Research Institute of Sensors, Zhengzhou University, Zhengzhou 450001, Henan, China
  • 3Zhengzhou Way Do Electronics Technology Co., Ltd., Zhengzhou 450001, Henan, China
  • 4Industrial Technology Research Institute Co., Ltd., Zhengzhou University, Zhengzhou 450001, Henan, China
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    Figures & Tables(6)
    Structure diagrams.(a) Structure diagram of DUV-LDs; (b) structure diagram of four different waveguide layers
    Simulated Landsberg model gain of DUV LDs
    Energy band diagrams of four structures
    MQW region. (a) Electron concentration distribution; (b) hole concentration distribution; (c) radiation recombination rate distribution
    Simulation results.(a) I-P curves for LD2 and LD3; (b) optical field distributions for LD2 and LD3
    Different LWG structures.(a) Schematic diagrams of four different LWG structures; (b) hole concentrations of seven LWG structures in p-CL region
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    Yuan Xu, Shiqin Wei, Pengfei Zhang, Yao Wang, Fang Wang, Yuhuai Liu. Deep-Ultraviolet Laser-Diode Radiation Recombination Properties Based on Double-Concave Waveguide Layers[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1514007

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    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 26, 2022

    Accepted: Jul. 26, 2022

    Published Online: Aug. 11, 2023

    The Author Email: Fang Wang (iefwang@zzu.edu.cn), Yuhuai Liu (ieyhliu@zzu.edu.cn)

    DOI:10.3788/LOP221705

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