Acta Physica Sinica, Volume. 69, Issue 9, 098802-1(2020)

Modeling and simulating of radiation effects on the performance degradation of GaInP/GaAs/Ge triple-junction solar cells induced by different energy protons

Jun-Wei Li1, Zu-Jun Wang2、*, Cheng-Ying Shi1, Yuan-Yuan Xue2、*, Hao Ning3, Rui Xu3, Qian-Li Jiao3, and Tong-Xuan Jia3
Author Affiliations
  • 1Xi’an Research Institute of High-Technology, Xi’an 710025, China
  • 2State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
  • 3School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
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    References(30)

    [6] Zhang Y Q[J]. Ph. D. Dissertation(2017).

    [16] Shi M[J]. Semiconductor Devices Physics and Technology, 522(2003).

    [21] Zhu M F, Xiong S Z[J]. Foundation  and  Application  of Solar Cells Vol. 1, 110(2014).

    [30] Anspaugh B E[J]. GaAs  Solar  Cell  Radiation  Handbook, 5(1996).

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    Jun-Wei Li, Zu-Jun Wang, Cheng-Ying Shi, Yuan-Yuan Xue, Hao Ning, Rui Xu, Qian-Li Jiao, Tong-Xuan Jia. Modeling and simulating of radiation effects on the performance degradation of GaInP/GaAs/Ge triple-junction solar cells induced by different energy protons[J]. Acta Physica Sinica, 2020, 69(9): 098802-1

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    Paper Information

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    Received: Dec. 11, 2019

    Accepted: --

    Published Online: Nov. 26, 2020

    The Author Email: Yuan-Yuan Xue (xueyuanyuan@nint.ac.cn)

    DOI:10.7498/aps.69.20191878

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