Acta Physica Sinica, Volume. 69, Issue 9, 098802-1(2020)
Fig. 1. Structure parameters of GaInP/GaAs/Ge triple-junction solar cells.
Fig. 2. Normalized maximum power versus fluence at the proton irradiation energy of 1 and 3 MeV (symbols and lines are experimental and simulation results respectively).
Fig. 3. Simulation results of
Fig. 4. Simulation results of normalized short-circuit current versus proton fluence for the GaInP/GaAs/Ge triple-junction solar cells irradiated by different energy proton.
Fig. 5. Simulation results of normalized open-circuit voltage versus proton fluence for GaInP/GaAs/Ge triple-junction solar cells irradiated by different energy proton.
Fig. 6. Simulation results of external quantum efficiency of GaInP and GaAs sub-cells before and after different energy proton irradiation with the fluence of 3 × 1012 cm–2.
Fig. 7. (a) Simulation results of current density (
Fig. 8. Simulation results of normalized maximum power versus proton fluence for GaInP/GaAs/Ge triple-junction solar cells irradiated by different energy proton.
Fig. 9. Degradation of normalized maximum power versus displacement damage dose for GaInP/GaAs/Ge triple-junction solar cells.
Table 1. [in Chinese]
View tableView in ArticleTable 1. [in Chinese]
Deep level E/eV NT/1014cm–3 H1 Ev + 0.55 eV 2.70 H2 Ev + 0.71 eV 4.05 H3 Ev + 0.90 eV 1.80 E1 Ec – 0.20 eV 4.60 E2 Ec – 0.36 eV 1.00 E3 Ec – 0.54 eV 2.22 E4 Ec – 0.79 eV 3.60
Table 2. [in Chinese]
View tableView in ArticleTable 2. [in Chinese]
Deep level E/eV NT/1014 cm–3 H1 Ev + 0.18 eV 4.030 H2 Ev + 0.23 eV 4.370 H3 Ev + 0.27 eV 4.790 H4 Ev + 0.77 eV 1.780 E1 Ec – 0.14 eV 1.600 E2 Ec – 0.25 eV 0.448 E3 Ec – 0.54 eV 0.557 E4 Ec – 0.72 eV 2.480
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Jun-Wei Li, Zu-Jun Wang, Cheng-Ying Shi, Yuan-Yuan Xue, Hao Ning, Rui Xu, Qian-Li Jiao, Tong-Xuan Jia.
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Received: Dec. 11, 2019
Accepted: --
Published Online: Nov. 26, 2020
The Author Email: Yuan-Yuan Xue (xueyuanyuan@nint.ac.cn)
