Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 4, 331(2025)

Investigation on key parameters of nanosecond high voltage pulse circuit based on SiC DSRD

YANG Zao, CHEN Wanjun, and CHEN Ziwen
Author Affiliations
  • School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu Sichuan 611731, China
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    References(6)

    [3] [3] EBERT U. The stages of a pulsed gas discharge[C]//The 19th Asian Conference on Electrical Discharge. Tokyo: [s.n.], 2019: 1-4.

    [4] [4] GREKHOV I V, EFANOV V M, KARDO-SYSOEV A F, et al. Power drift step recovery diodes (DSRD)[J]. Solid-State Electronics, 1985, 28(6): 597-599. DOI: 10.1016/0038-1101(85)90130-3.

    [6] [6] GREKHOV I V, IVANOV P A, KONSTANTINOV A O, et al. On the possibility of creating a superfast-recovery silicon carbide diode[J]. Technical Physics Letters, 2002, 28(7): 544-546. DOI: 10.1134/1.1498779.

    [7] [7] MERENSKY L M, KESAR A S, KARDO-SYSOEV A F, et al. Efficiency study of a 2.2 kV, 1 ns, 1 MHz pulsed power generator based on a drift-step-recovery diode[J]. IEEE Transactions on Plasma Science, 2013, 41(11): 3138-3142. DOI: 10.1109/TPS.2013.2284601.

    [9] [9] FANG Xu, SONG Huimin, WU Yun, et al. Driving mechanism of drift-step-recovery diodes[J]. Review of Scientific Instruments, 2021, 92(8): 084702. DOI: 10.1063/5.0048768.

    [11] [11] FANG Xu, SONG Huimin, WU Yun, et al. Driving mechanism of drift-step-recovery diodes[J]. The Review of Scientific Instruments, 2021, 92(8): 084702. DOI: 10.1063/5.0048768.

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    YANG Zao, CHEN Wanjun, CHEN Ziwen. Investigation on key parameters of nanosecond high voltage pulse circuit based on SiC DSRD[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(4): 331

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    Paper Information

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    Received: Aug. 30, 2024

    Accepted: May. 29, 2025

    Published Online: May. 29, 2025

    The Author Email:

    DOI:10.11805/tkyda2024517

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