Investigation on key parameters of nanosecond high voltage pulse circuit based on SiC DSRD

YANG Zao; CHEN Wanjun; CHEN Ziwen

doi:10.11805/tkyda2024517

Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 4, 331(2025)

Investigation on key parameters of nanosecond high voltage pulse circuit based on SiC DSRD

YANG Zao, CHEN Wanjun, and CHEN Ziwen

School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, Chengdu Sichuan 611731, China

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YANG Zao, CHEN Wanjun, CHEN Ziwen. Investigation on key parameters of nanosecond high voltage pulse circuit based on SiC DSRD[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(4): 331

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Paper Information

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Received: Aug. 30, 2024

Accepted: May. 29, 2025

Published Online: May. 29, 2025

The Author Email:

DOI:10.11805/tkyda2024517

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology