Chinese Journal of Lasers, Volume. 50, Issue 20, 2002405(2023)

Study of Stealth Dicing of Silicon Carbide Wafers Under Ultrafast Laser Multi‑Pulse Mode and Burst Mode

Yunpeng Ren*, Xincheng Tu, Kun He, Li Cheng, Yunxia Ye, Xudong Ren, and Naifei Ren
Author Affiliations
  • School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China
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    Figures & Tables(14)
    Schematic of laser processing optical path
    Schematic of stealth dicing
    Flow chart of laser stealth dicing. (a) Prefabricating ablation channel on bottom surface; (b) modified layers formed inside;(c) multi-modifying along step direction; (d) splitting along modified surface
    Schematics of internal pulse pick. (a) Pulse sequence of seed source; (b) TTL level signal; (c) picked pulses
    Schematics of multi-pulse mode and burst mode pulse. (a) single pulse; (b) two sub-pulses; (c) n sub-pulses
    Influence of pulse energy on cutting effect under multi-pulse mode. (a1)-(a4) Morphologies of top surface ; (b1)-(b4) morphologies of bottom surface ; (c1)-(c3) edge chipping morphologies of top surface; (d1)-(d3) edge chipping morphologies of bottom surface; (e1)-(e3) cross-section morphologies; (f) influence of single pulse energy on kerf width; (g) influence of single pulse energy on top and bottom edge chipping sizes and cross-section roughness
    Influence of feed distance on cutting effect under multi-pulse mode. (a1)-(a3) Morphologies of top surface; (b1)-(b3) morphologies of bottom surface; (c1)-(c3) edge chipping morphologies of top surface; (d1)-(d3) edge chipping morphologies of bottom surface; (e1)-(e3) cross-section morphologies; (f) influence of feed distance on kerf width; (g) influence of feed distance on top and bottom edge chipping sizes and cross-section roughness
    Influence of repetition frequency on cutting effect under multi-pulse mode. (a1)-(a4) Morphologies of top surface; (b1)-(b4) morphologies of bottom surface; (c1)-(c4) edge chipping morphologies of top surface; (d1)-(d4) edge chipping morphologies of bottom surface; (e1)-(e4) cross-section morphologies; (f) influence of repetition frequency on kerf width; (g) influence of repetition frequency on top and bottom edge chipping sizes and cross-section roughness
    Influence of pulse width on cutting effect under multi-pulse mode. (a1)-(a3) Morphologies of top surface; (b1)-(b3) morphologies of bottom surface; (c1)-(c3) edge chipping morphologies of top surface; (d1)-(d3) edge chipping morphologies of bottom surface ; (e1)-(e3) cross-section morphologies; (f) influence of pulse width on kerf width; (g) influence of pulse width on top and bottom edge chipping sizes and cross-section roughness
    Influence of scanning speed on cutting effect under multi-pulse mode. (a1)-(a3) Morphologies of top surface; (b1)-(b3) morphologies of bottom surface; (c1)-(c3) edge chipping morphologies of top surface; (d1)-(d3) edge chipping morphologies of bottom surface; (e1)-(e3) cross-section morphologies; (f) influence of scanning speed on kerf width; (g) influence of scanning speed on top and bottom edge chipping sizes and cross-section roughness
    Influence of sub-pulse number on cutting effect under burst mode. (a1)-(a4) Morphologies of top surface; (b1)-(b4) morphologies of bottom surface; (c1)-(c4) edge chipping morphologies of top surface; (d1)-(d4) edge chipping morphologies of bottom surface; (e1)-(e4) cross-section morphologies; (f) influence of sub-pulse number on kerf width; (g) influence of sub-pulse number on top and bottom edge chipping sizes and cross-section roughness
    • Table 1. Main parameters of ultrafast laser

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      Table 1. Main parameters of ultrafast laser

      ParameterContent
      Wavelength1030 nm
      Pulse duration270 fs-10 ps
      Frequency50 kHz-20 MHz
      Maximum power80 W
      Maximum pulse energy160 μJ
      Beam qualityM2<1.3
      Beam modeTEM00 Gaussian mode
    • Table 2. Main parameters of objective lens

      View table

      Table 2. Main parameters of objective lens

      ParameterValue
      Magnification50×
      Numerical aperture0.65
      Focal length4 mm
      Working distance10 mm
      Wavelength range480-1800 nm
    • Table 3. Main parameters of movement platform

      View table

      Table 3. Main parameters of movement platform

      ParameterX-axis directionY-axis directionZ-axis direction
      Maximum travel of platform200 mm600 mm100 mm
      Maximum speed800 mm/s800 mm/s200 mm/s
      Repeat positioning accuracy±1 μm±1 μm±1 μm
      Positioning accuracy±2 μm±2 μm±2 μm
      Resolution0.01 μm0.01 μm0.01 μm
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    Yunpeng Ren, Xincheng Tu, Kun He, Li Cheng, Yunxia Ye, Xudong Ren, Naifei Ren. Study of Stealth Dicing of Silicon Carbide Wafers Under Ultrafast Laser Multi‑Pulse Mode and Burst Mode[J]. Chinese Journal of Lasers, 2023, 50(20): 2002405

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    Paper Information

    Category: Laser Micro-Nano Manufacturing

    Received: Feb. 13, 2023

    Accepted: Apr. 3, 2023

    Published Online: Aug. 10, 2023

    The Author Email: Ren Yunpeng (renyp@ujs.edu.cn)

    DOI:10.3788/CJL230517

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