AEROSPACE SHANGHAI, Volume. 42, Issue 4, 53(2025)

Spurious-free SAW Resonators on 42°Y-cut LiTaO3/SiO2/α-Si/Si Substrate with Tilted IDT

Shijia LI, Zonglin WU, Hangyu QIAN, and Guomin YANG
Author Affiliations
  • School of Future Information Technology,Fudan University,Shanghai200433,China
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    With the growing demand for 5G technology applications,there is an urgent need to improve the performance of surface acoustic wave (SAW) filters in radio frequency (RF) front-end modules.The shear horizontal (SH) SAW resonators based on piezoelectric thin films exhibit excellent characteristics.However,some transverse spurious modes may appear in the admittance responses of SAW resonators,leading to severe in-band ripples in the SAW filters constructed from such resonators,which hinders their application in 5G technology.This paper proposes an SH-SAW resonator based on a hetero-layered substrate of 42°Y-cut LiTaO?/SiO?/α-Si/Si.To investigate the generation of transverse modes,the dispersion characteristics and slowness curves of the device are analyzed using the finite element method (FEM).The fabricated SAW resonator with normal interdigital transducers (IDTs) achieves an electromechanical coupling coefficient (keff2) of 11.1% and a Bode-Qmax of 1 317.Additionally,an SAW resonator with tilted IDTs is fabricated to suppress the spurious modes.With a tilt angle of 6°,the measured results demonstrate effective suppression of transverse spurious modes.

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    Shijia LI, Zonglin WU, Hangyu QIAN, Guomin YANG. Spurious-free SAW Resonators on 42°Y-cut LiTaO3/SiO2/α-Si/Si Substrate with Tilted IDT[J]. AEROSPACE SHANGHAI, 2025, 42(4): 53

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    Paper Information

    Category: Microsystems Devices and Reliable Applications

    Received: May. 28, 2025

    Accepted: --

    Published Online: Sep. 29, 2025

    The Author Email:

    DOI:10.19328/j.cnki.2096-8655.2025.04.005

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