Journal of Synthetic Crystals, Volume. 51, Issue 6, 1012(2022)

Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction

YIN Jiaqi1,2、*, YU Chunyan1,2, ZHAI Guangmei2, LI Tianbao1,2, and ZHANG Zhuxia3,4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    References(31)

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    YIN Jiaqi, YU Chunyan, ZHAI Guangmei, LI Tianbao, ZHANG Zhuxia. Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction[J]. Journal of Synthetic Crystals, 2022, 51(6): 1012

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    Paper Information

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    Received: Mar. 12, 2022

    Accepted: --

    Published Online: Aug. 13, 2022

    The Author Email: Jiaqi YIN (yinjiaqi94@163.com)

    DOI:

    CSTR:32186.14.

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