Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Journal of Synthetic Crystals, Volume. 51, Issue 6, 1012(2022)

Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction

YIN Jiaqi1,2、*, YU Chunyan1,2, ZHAI Guangmei2, LI Tianbao1,2, and ZHANG Zhuxia3,4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (0)
    Equations (0)
    References (31)
    Tools
    Paper Information
    Topics
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    YIN Jiaqi, YU Chunyan, ZHAI Guangmei, LI Tianbao, ZHANG Zhuxia. Effect of Indium and Gallium Co-Doping on Growth Behavior and Photoelectric Properties of n-ZnO Nanorods/p-GaN Heterojunction[J]. Journal of Synthetic Crystals, 2022, 51(6): 1012

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category:

    Received: Mar. 12, 2022

    Accepted: --

    Published Online: Aug. 13, 2022

    The Author Email: Jiaqi YIN (yinjiaqi94@163.com)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology