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Chinese Journal of Lasers, Volume. 51, Issue 2, 0210001(2024)

Simulation of Charge Collection Efficiency Optimization for EBCMOS with Uniform and Gradient Doping

Gangcheng Jiao1, De Song1,2、*, Lei Yan1, Chao Xiao1, Ye Li1,2, and Weijun Chen1,2、**
Author Affiliations
  • 1Science and Technology on Low-Light-Level Night Version Laboratory, Xi an 710065, Shaanxi, China
  • 2College of Physics, Changchun University of Science and Technology, Changchun 130022, Jilin, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (11)
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    References (25)
    Cited By (3)
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    Figures & Tables(11)
    Structure of EBCMOS

    Fig. 1. Structure of EBCMOS

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    Structure of BSB-CMOS

    Fig. 2. Structure of BSB-CMOS

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    Diagram of electron motion trajectories

    Fig. 3. Diagram of electron motion trajectories

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    Charge collection efficiency for different doping concentrations

    Fig. 4. Charge collection efficiency for different doping concentrations

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    Scatter diagram of electronics in pixel area for different substrate thicknesses. (a) 5 μm; (b) 15 μm; (c) 25 μm; (d) 35 μm

    Fig. 5. Scatter diagram of electronics in pixel area for different substrate thicknesses. (a) 5 μm; (b) 15 μm; (c) 25 μm; (d) 35 μm

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    Charge collection efficiency for different substrate thicknesses

    Fig. 6. Charge collection efficiency for different substrate thicknesses

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    Scatter diagram of electronics in pixel area for different proximity distances. (a) 5000 μm; (b) 3000 μm; (c) 1000 μm; (d) 500 μm

    Fig. 7. Scatter diagram of electronics in pixel area for different proximity distances. (a) 5000 μm; (b) 3000 μm; (c) 1000 μm; (d) 500 μm

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    Charge collection efficiency for different proximity distances

    Fig. 8. Charge collection efficiency for different proximity distances

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    Gradient doping structure model

    Fig. 9. Gradient doping structure model

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    Diagram of electron motion trajectories under gradient doping

    Fig. 10. Diagram of electron motion trajectories under gradient doping

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    Charge collection efficiency under different structural models

    Fig. 11. Charge collection efficiency under different structural models

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    Gangcheng Jiao, De Song, Lei Yan, Chao Xiao, Ye Li, Weijun Chen. Simulation of Charge Collection Efficiency Optimization for EBCMOS with Uniform and Gradient Doping[J]. Chinese Journal of Lasers, 2024, 51(2): 0210001

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    Paper Information

    Category: remote sensing and sensor

    Received: May. 4, 2023

    Accepted: May. 22, 2023

    Published Online: Jan. 4, 2024

    The Author Email: Song De (songde614@163.com), Chen Weijun (chenweijun@cust.edu.cn)

    DOI:10.3788/CJL230794

    CSTR:32183.14.CJL230794

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology