[1] Zhang X, Jin D M, Liu L T[J]. Transd. Microsys. Technol., 3, 1(2006).

[2] Rue B, Flandre D[J]. Proccedings 2007 IEEE International SOI Conference, 111(2007).

[3] de Souza M, Rue B, Flandre D, Pavanello M A[J]. Proccedings 2009 IEEE International SOI Conference, 1(2009).

[4] Xie G, Edward X, Niloufar H, Zhang B, Fred Y F, Wai T N[J]. Chin. Phys. B, 21, 086105(2012).

[5] Duan B X, Yang Y T[J]. Acta Phys. Sin., 63, 057302(2014).

[6] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F, Dimitrov R, Wittmer L, Stutzmann M, Rieger W, Hilsenbeck J[J]. J. Appl. Phys., 85, 3222(1999).

[7] Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y[J]. Acta Phys. Sin., 53, 2320(2004).

[8] Kwan A M H, Guan Y, Liu X S, Chen K J[J]. IEEE Trans. Electron Devices, 61, 2970(2014).

[9] Rao S, Pangallo G, Della Corte F G[J]. IEEE Trans. Electron Devices, 63, 414(2016).

[10] Matthus C D, Erlbacher T, Hess A, Bauer A J, Frey L[J]. IEEE Trans Electron Devices, 64, 3399(2017).

[11] Madhusoodhanan S, Sandoval S, Zhao Y, Ware M E, Chen Z[J]. IEEE Electr Device Lett., 38, 1105(2017).

[12] Pristavu G, Brezeanu G, Pascu R, Draghici F, Badila M[J]. Mater. Sci. Semicond. Process., 94, 64(2019).

[13] Gu J, Wang Q, Lu H[J]. Acta Phys. Sin., 60, 077107(2011).

[14] Liu Y[J]. Ph. D. Dissertation(2017).

[15] Huque M A, Eliza S A, Rahman T, Huq H F, Islam S K[J]. Solid State Electron., 53, 341(2009).

[16] Yahyazadeh R, Hashempour Z[J]. 27th International Conference on Microelectronics MIEL 2010, 189(2010).

[17] Iwanaga H, Kunishige A, Takeuchi S[J]. J. Mater. Sci., 35, 2451(2000).

[18] Akita M, Kishimoto S, Mizutani T[J]. IEEE Electron Device Lett., 22, 376(2001).

[19] Chang Y C, Tong K Y, Surya C[J]. Semicond. Sci. Technol., 20, 188(2005).

[20] Nagelkerke N J D[J]. Biometrika, 78, 691(1991).

[21] Ren J[J]. Ph. D. Dissertation(2017).

[22] Chen W W[J]. Ph. D. Dissertation(2016).