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Acta Physica Sinica, Volume. 69, Issue 4, 047201-1(2020)

Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor

Xu-Yang Liu, He-Qiu Zhang*, Bing-Bing Li, Jun Liu, Dong-Yang Xue, Heng-Shan Wang, Hong-Wei Liang, and Xiao-Chuan Xia
Author Affiliations
  • School of Microelectronics, Dalian University of Technology, DaLian 116024, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (9)
    Equations (12)
    References (22)
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    Figures & Tables(9)
    Schematic diagram of the device structure.

    Fig. 1. Schematic diagram of the device structure.

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    The voltage change across the HEMT device with temperature when the current is fixed.

    Fig. 2. The voltage change across the HEMT device with temperature when the current is fixed.

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    I-V characteristic curve of HEMT device at 50−400 °C

    Fig. 3. I-V characteristic curve of HEMT device at 50−400 °C

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    Curve and fitting curve of voltage changes with temperature at fixed current (0.01 A).

    Fig. 4. Curve and fitting curve of voltage changes with temperature at fixed current (0.01 A).

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    Device sensitivity as a function of channel length.

    Fig. 5. Device sensitivity as a function of channel length.

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    Temperature stability of the device in N2 atmosphere.

    Fig. 6. Temperature stability of the device in N2 atmosphere.

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    Temperature stability of the device in an air atmosphere.

    Fig. 7. Temperature stability of the device in an air atmosphere.

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    • Table 1. Some semiconductor high temperature sensors in various structures.

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      Table 1. Some semiconductor high temperature sensors in various structures.

      文献结构灵敏度/ mV/℃温度/℃
      [8] 单片集成的AlGaN/GaN HEMT0.3825—250
      [9] 4H-SiC p-i-n二极管2.6620—300
      [10] 4H-SiC p-i-n二极管4.525—460
      [11] GaN-on-SiC异质结二极管2.2525—400
      [12] Ni/4H-SiC肖特基二极管2.3325—450
      本文工作无栅AlGaN/GaN HEMT44.550—400

    • Table 2.

      List of fitting parameters.

      拟合参数列表

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      Table 2.

      List of fitting parameters.

      拟合参数列表

      参数μ300 KφB(m) NddAlGaNεAlGaN(m)
      单位cm2/(V·s) eVcm–3nmε0
      值11000.85+1.3 m3 × 10172010.4–0.3 m
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    Xu-Yang Liu, He-Qiu Zhang, Bing-Bing Li, Jun Liu, Dong-Yang Xue, Heng-Shan Wang, Hong-Wei Liang, Xiao-Chuan Xia. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor[J]. Acta Physica Sinica, 2020, 69(4): 047201-1

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    Paper Information

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    Received: Apr. 29, 2019

    Accepted: --

    Published Online: Nov. 17, 2020

    The Author Email:

    DOI:10.7498/aps.69.20190640

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology