Researching | Fabrication and photo-response of monolithic 90° hybrid-photodetector array chip for QPSK detection

Chinese Optics Letters, Volume. 21, Issue 1, 011301(2023)

Fabrication and photo-response of monolithic 90° hybrid-photodetector array chip for QPSK detection

Han Ye^1,2、*, Qin Han^1,2,3, Shuai Wang¹, Feng Xiao^1,4, Fan Xiao^1,4, Yimiao Chu^1,4, and Liyan Geng¹

Author Affiliations

¹State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁴College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(13)

Fig. 1. Cross-section SEM image of epitaxial layers after regrowth.

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Fig. 2. PD jointed to the hybrid waveguide 3D image.

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Fig. 3. Microscope photo of the fabricated monolithic chip.

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Fig. 4. Dark current of the PD array.

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Fig. 5. Responsivities and excess loss of the monolithic chip.

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Fig. 6. CMRR of the monolithic chip.

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Fig. 7. Spectral response of the monolithic chip integrated with the splitter.

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Fig. 8. Phase deviation of the monolithic chip.

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Fig. 9. Simulated phase deviation with fabrication error.

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Fig. 10. Simulated excess loss with fabrication error.

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Table 1. Parameters of the 90° Hybrid
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Table 1. Parameters of the 90° Hybrid
Input/Output waveguide width 2.0 µm
Waveguide separation 5.0 µm
Taper end width 3.6 µm
Taper length 50 µm
MMI region length 810 µm
MMI region width 20 µm

Table 2. Parameters of the Evanescent Photodetector

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Table 2. Parameters of the Evanescent Photodetector

Material Composition	Doping Type and Density [ ${cm}^{- 3}$ ]	Thickness [nm]
${In}_{0.53} {Ga}_{0.47} As$	P, $1 \times 10^{18}$	50
InP	P, $2 \times 10^{17}$	300
InGaAsP (graded)	P, $1 \times 10^{16}$	40
${In}_{0.53} {Ga}_{0.47} As$ (absorption layer)	N, $1 \times 10^{16}$	560
InGaAsP (graded)	N, $2 \times 10^{17}$	40
InGaAsP (Q1.065)	N, $3 \times 10^{18}$	500

Table 3. Parameters of the 1 × 2 Splitter
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Table 3. Parameters of the 1 × 2 Splitter
MMI region length 95 µm
MMI region width 10 µm
Delay line radius 550 µm
Delay line length difference 172.24 µm

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Han Ye, Qin Han, Shuai Wang, Feng Xiao, Fan Xiao, Yimiao Chu, Liyan Geng, "Fabrication and photo-response of monolithic 90° hybrid-photodetector array chip for QPSK detection," Chin. Opt. Lett. 21, 011301 (2023)

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Paper Information

Category: Integrated Optics

Received: Jan. 5, 2022

Accepted: Jul. 22, 2022

Posted: Jul. 22, 2022

Published Online: Sep. 20, 2022

The Author Email: Han Ye (yeh@semi.ac.cn)

DOI:10.3788/COL202321.011301

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology