Journal of Synthetic Crystals, Volume. 54, Issue 6, 979(2025)

Effect of MOCVD Carrier Gas Flow Rate on GaN Epitaxial Growth

Yazhou LI, Zhanhong MA*, Weizhen YAO*, Shaoyan YANG, Xianglin LIU, Chengming LI, and Zhanguo WANG
Author Affiliations
  • School of Electronic and Electrical Engineering, Ningxia University, Yinchuan750021, China
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    Figures & Tables(6)
    Thickness distribution of GaN thin films at different H2 carrier gas flow rates
    AFM surface morphology images 5 μm × 5 μm of GaN thin films at different H2 carrier gas flow rates
    SEM cross-sectional images of GaN samples at different H2 carrier gas flow rates
    HRXRD test results of GaN thin films at different H2 carrier gas flow rates
    TEM cross-sectional image (a), and corresponding EELS mapping images of Si (b), Al (c), Ga (d), N (e) elements of sample E
    • Table 1. H<sub>2</sub> carrier gas flow rate values for different samples

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      Table 1. H<sub>2</sub> carrier gas flow rate values for different samples

      SampleCarrier gas flow rate/slmIncrease/decrease
      A12-60%
      B21-30%
      C300
      D39+30%
      E48+60%
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    Yazhou LI, Zhanhong MA, Weizhen YAO, Shaoyan YANG, Xianglin LIU, Chengming LI, Zhanguo WANG. Effect of MOCVD Carrier Gas Flow Rate on GaN Epitaxial Growth[J]. Journal of Synthetic Crystals, 2025, 54(6): 979

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    Paper Information

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    Received: Jan. 15, 2025

    Accepted: --

    Published Online: Jul. 8, 2025

    The Author Email: Zhanhong MA (mzh@nxu.edu.cn), Weizhen YAO (wz-yao@semi.ac.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2025.0013

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