Journal of Synthetic Crystals, Volume. 54, Issue 6, 979(2025)
Effect of MOCVD Carrier Gas Flow Rate on GaN Epitaxial Growth
Fig. 1. Thickness distribution of GaN thin films at different H2 carrier gas flow rates
Fig. 2. AFM surface morphology images 5 μm × 5 μm of GaN thin films at different H2 carrier gas flow rates
Fig. 3. SEM cross-sectional images of GaN samples at different H2 carrier gas flow rates
Fig. 4. HRXRD test results of GaN thin films at different H2 carrier gas flow rates
Fig. 5. TEM cross-sectional image (a), and corresponding EELS mapping images of Si (b), Al (c), Ga (d), N (e) elements of sample E
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Yazhou LI, Zhanhong MA, Weizhen YAO, Shaoyan YANG, Xianglin LIU, Chengming LI, Zhanguo WANG. Effect of MOCVD Carrier Gas Flow Rate on GaN Epitaxial Growth[J]. Journal of Synthetic Crystals, 2025, 54(6): 979
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Received: Jan. 15, 2025
Accepted: --
Published Online: Jul. 8, 2025
The Author Email: Zhanhong MA (mzh@nxu.edu.cn), Weizhen YAO (wz-yao@semi.ac.cn)