Infrared Technology, Volume. 46, Issue 3, 342(2024)

Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment

Lei YAN1...2, Feng SHI1,2,*, Hongchang CHENG1,2, Gangcheng JIAO1,2, Ye YANG1,2, Chao XIAO1,2, Haibo FAN1,2, Zhou ZHEN1,2, Haichen DONG1,2, and Huiyang HE12 |Show fewer author(s)
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  • 2[in Chinese]
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    References(13)

    [1] [1] Mackay C D, Tubbs R N, Bell R, et al. Sub-electron readnoise at MHz pixel rates (A)[C]//Proceedings of SPIE, 2001, 4306: 289-298

    [2] [2] XIN Fuxue. Optical fiber coupling technique of ICCD[J]. Infrared and Laser Engineering, 2001, 30(3): 210 -213.

    [3] [3] Benussi L, Fanti V, Frekers D, et al. A multichannel single-photon sensitive detector for high-energy physics: themegapixel EBCCD[J]. Nuclear Instruments and Methods in Physics Research A, 2000(442): 154-158.

    [4] [4] SONG De, SHI Feng, LI Ye. Simulation of charge collection efficiency for EBAPS with uniformly doped substrate[J]. Infrared and Laser Engineering, 2016, 45(2): 0203002.

    [5] [5] LIU Yaning, SANG Peng, LYU Jiawei, et al. Miniature low power consumption EBAPS camera technology[J]. Infrared Technology, 2019, 41(9): 810-818.

    [6] [6] LIU Hulin, WANG Xing, TIAN Jinshou, et al. High resolution electron bombareded complementary metal oxide semiconductor sensor for ultraviolet detection[J]. Acta Physica Sinica, 2018, 67(1): 152-157.

    [7] [7] XU Pengxiao, TANG Guanghua, TANG Jiaye, et al. Review of EBCMOS Hybrid Photodetector[J]. Optoelectronic Technology, 2016, 36(4): 232-252.

    [8] [8] Barbier R, Cajgfinger T, Calabria P, et al. A single-photonsensitive EBCMOS camera: The LUSIPHER prototype [J]. Nuclear Instruments and Methods in Physics Research A, 2011, 648(1): 266-274.

    [9] [9] WANG Shengkai, JIN Chuan, QIAO Kai, et al. Impact of annealing temperature on SNR in backside illuminated CMOS[J]. Infrared Technology, 2016, 41(6): 585-590.

    [10] [10] QIAO Kai, WANG Shengkai, CHENG Hongchang, et al. Experimental study on the electron sensitivity of BCMOS sensor influenced by surface passivation film[J]. Infrared and Laser Engineering, 2020, 49(4): 0418002.

    [11] [11] Nathan Eric Howard. Development of Techniques to Characterize Electron-bombarded Charge-coupled Devices[D]. Tucson: The University of Arizona, 2002.

    [12] [12] Hundur Yakup, Guvenc Ziya B, Hippler Rainer. Dynamical analysis of sputtering at threshold energy range: modelling of Ar+Ni(100) collision system[J]. Chin. Phys. Lett., 2008, 25(2): 730-733.

    [13] [13] LIU Enke, ZHU Bingsheng, LUO Jinsheng. The Physics of Semiconductors[M]. Beijing: Electronics Industry Press, 2011.

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    YAN Lei, SHI Feng, CHENG Hongchang, JIAO Gangcheng, YANG Ye, XIAO Chao, FAN Haibo, ZHEN Zhou, DONG Haichen, HE Huiyang. Dark Current of Aluminum Oxide Passivation Film BCMOS Sensor Increased by Low Energy Electron Bombardment[J]. Infrared Technology, 2024, 46(3): 342

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    Paper Information

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    Received: May. 6, 2022

    Accepted: --

    Published Online: Sep. 2, 2024

    The Author Email: Feng SHI (shfyf@126.com)

    DOI:

    CSTR:32186.14.

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